RUPALI VERMA

Research Interests: 

1. Investigating prospects of 2D Materials in next generation semiconductor technologies.

2. High field transport in Quantum confined 2D semiconductors - Exploring impact ionization and the role of intrinsic material defects.

3. Cryogenic electro-optic modulators based on 2D Materials - Defect related emission and the electric field effect

Ph.D. Advisor Information:

Prof. Mayank Shrivastava

Associate Professor

Department of Electronic Systems Engineering

Indian Institute of Science Bangalore, 560012 

Skills:

Device Fabrication:

More than 4 years of device fabrication experience in CLASS-100 Clean Room. 

Lithography: Mask Designing, electron beam Lithography

Etching: Dry and Wet

Deposition: Electron beam Evaporation, Sputtering

Glove box operation

Material Characterization:

Optical and Fluorescence Microscopy

Scanning Electron Microscopy 

Raman Spectroscopy 

Photoluminescence Spectroscopy 

Atomic Force Microscopy 

Device Characterization:

Manual Probe Station

Semi-automatic Probe Station

Cryogenic and Vacuum Probe Station

IV & CV Characterization 

Deep Level Transient Spectroscopy 

Electroluminescence 

Data Extraction and Analysis:

Data Extraction from Manual and Automated Measurements using MATLAB scripts and data plotting and analysis using Origin.  

Coursework:

The courses were opted with the motive of gaining in-depth theoretical and practical knowledge about semiconductor physics and nanotechnology in general. They have helped me understand the fundamental concepts, enabling comprehension of more advanced ideas for carrying out future work. The following eight courses have been credited by me to fulfill minimum requirements of 24 credits for PhD:

Semester 1 (August-December):

1. Basics of Semiconductor Devices and Technology [3]

2. Foundations of Nanoelectronic Devices [3]

3. Applied Solid State Physics [3]

4. Microelectronics Lab [3]

5. Micro and Nano Characterization Methods [3]

Semester 2 (January-April):

1. Condensed Matter Physics-I [3]

2. Physics at the Nanoscale [3]

3. Special Topics in Nanoelectronics [3]

CGPA: 9

Publications:

1. Verma, R., Patbhaje, U., Shah, A.A., Dar, A.B. and Shrivastava, M., 2025. Impact ionization and the paradox of defects in transition metal dichalcogenide FETs. npj 2D Materials and Applications, 9(1), p.23. 

Conferences:

1. R. Verma, U. Patbhaje, J. Kumar, A. Kumar Rai and M. Shrivastava, “Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs ,” accepted and published in 2024 IEEE International Reliability Physics Symposium (IRPS)

2. R. Verma, U. Patbhaje, J. Kumar, A. Kumar Rai and M. Shrivastava, “OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-illuminated state,” submitted and under review for publication in 2023 IEEE International Reliability Physics Symposium (IRPS)

3. R. Verma, U. Patbhaje, and M. Shrivastava, “Effect of in-plane electric field on the excitonic photoluminescence quenching and photocurrent generation in monolayer WS2”, accepted for Poster  Presentation in Graphene Week 2022, Munich, Germany, September 5-9, 2022

4. R. Verma, U. Patbhaje, A. Altaf Shah and M. Shrivastava, “Impact Ionization of Excitons by In-Plane Electric Field Accelerated Hot Carriers in Monolayer WS2,” accepted for Oral Presentation in the IEEE International Conference on Emerging Electronics(ICEE) December 11-14, 2022.

5. Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, and Mayank Shrivastava, "Inverse Piezoelectricity Driven Performance Drifts in TMD FETs" under preparation

6. Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Aadil Bashir Dar, Sumana Chattaraj, Mayank Shrivastava, "Unique Breakdown Pathways in CVD MoS2 FETs" under preparation

7. Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Aadil Bashir Dar and Mayank Shrivastava, "Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs" submitted and under review at IEEE IRPS 2024 to be held in Dallas, Texas, USA

8. Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, Mayank Shrivastava, “Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs” accepted and published in 2023 IEEE International Reliability Physics Symposium (IRPS)

9. Utpreksh Patbhaje, Rupali Verma, Mayank Shrivastava, “Unique Reliability Concern on Intrinsic MoSe2 FET Channel,” Poster presentation at Graphene Week 2022, Munich

10. Utpreksh Patbhaje, Rupali Verma, Mayank Shrivastava, “Unique Reliability Concern on Intrinsic MoSe2 FET Channel,” Accepted for oral presentation at Proc. of 2022 IEEE International Conference on Emerging Electronics (ICEE)

11. Purbasha Ray, Rupali Verma, Mayank Shrivastava, Prasana K. Sahoo “2D MoSe2-WSe2 Lateral Heterostructure Based Emerging Electronics” accepted for poster presentation at the International Conference on Functional Materials (ICFM), 2024

12. Purbasha Ray , Rupali Verma , Biswajeet Nayak, Suman Kumar Chakraborty, Mayank Shrivastava, and Prasana Kumar Sahoo “Probing the Origin of Photocurrent in 2D Bilayer MoSe2-WSe2 Lateral Heterostructure” accepted for oral talk at IEEE Electronic Devices Technology and Manufacturing (EDTM), 2024

13. Purbasha Ray, Rupali Verma, Biswajeet Nayak, Suman Kumar Chakraborty, Praveen Kumar, Mayank Shrivastava, Prasana K. Sahoo “Direct Fabrication of 2D Lateral P-N Junction Diode via CVD” accepted for poster presentation at the International Workshop on the Physics of Semiconductor Devices (IWPSD), 2023

14. Biswajeet Nayak, Rupali Verma, Mayank Srivastava, and Prasana Kumar Sahoo “Controlled Growth of large area 2D Transition Metal Dichalcogenides and Lateral Heterostructures, and their Electrical Characteristics” accepted for poster presentaaion at the International Conference on Functional Materials (ICFM), 2024

15. Biswajeet Nayak, Rupali Verma, Purbasha Ray, Suman Kumar Chakraborty, Mayank Shrivastava, and Prasana Kumar Sahoo “Robust Growth of Electronic Grade p-type Large Area 2D WSe2 and High-performance FET Devices” accepted for oral talk at the IEEE Electronic Devices Technology and Manufacturing (EDTM), 2024

16. Biswajeet Nayak, Rupali Verma, Purbasha Ray, Suman Kumar Chakraborty, Praveen Kumar , Mayank Shrivastava , Prasana K. Sahoo “Growth of 2D Lateral Heterostructures via controlled Edged-Epitaxy and their Device Characteristics” accepted for poster presentation at Recent Progress in Graphene and 2D Materials Research (RPGR), 2023

Currently exploring new roles where I can apply my expertise and contribute to impactful projects. I welcome the chance to connect and discuss potential opportunities.