Sell MITSUBISHI QM50TX-HB New Stock

QM50TX-HB Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin; QM50TX-HB

• Part Number: QM50TX-HB

• Category: IGBT Module

• Manufacturer: MITSUBISHI

• Packaging: 50A/600V/GTR/6U

• Data Code: 2019+

• Qty Available: 100

#QM50TX-HB MITSUBISHI QM50TX-HB New Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin, QM50TX-HB pictures, QM50TX-HB price, #QM50TX-HB supplier

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Manufacturer Part Number: QM50TX-HB

Part Life Cycle Code: Obsolete

Ihs Manufacturer: MITSUBISHI ELECTRIC CORP

Package Description: FLANGE MOUNT, R-PUFM-X11

Manufacturer: Mitsubishi Electric

• IC Collector current .......................... 50A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain............................. 750

Risk Rank: 5.66

Collector Current-Max (IC): 50 A

Configuration: COMPLEX

DC Current Gain-Min (hFE): 750

Fall Time-Max (tf): 3000 ns

JESD-30 Code: R-PUFM-X11

Number of Elements: 6

Number of Terminals: 11

Operating Temperature-Max: 150 °C

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: NPN

Qualification Status: Not Qualified

Subcategory: BIP General Purpose Power

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

VCEsat-Max: 2.5 V

Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin