MISUBISHI PM450CG1C065 New Stock

#PM450CG1C065 MISUBISHI PM450CG1C065 New MISUBISHI High power switching use insulated type VCES 650V / 450 A, #PM450CG1C065

Email: sales@shunlongwei.com

https://www.slw-ele.com/pm450cg1c065.html

FEATURE

a) Adopting Full-Gate CSTBTTM chip.

b) The over-temperature protection which

detects the chip surface temperature of

CSTBTTM is adopted.

c) Error output signal is available from

each protection upper and lower arm of IPM.

d) Outputting an error signal corresponding

to the abnormal state (error mode identification)

Collector-Emitter Voltage VD=15 V, VCIN=15 V VCES:650 V

Collector Current TC=25 °C IC:450A

Collector Current Pulse ICRM: 675 A

Total Power Dissipation TC=25 °C Ptot: 1388 W

Emitter Current TC=25 °C IE: 450A

(Free-wheeling Diode Forward current) Pulse IERM: 675 A

Junction Temperature (Note5) Tvj: -20 ~ +150 °C

Isolation Voltage 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS Visol: 2500V