#PM150CSD120 MITSUBISHI PM150CSD120 New MITSUBISHI IGBT Module 1200V 150A , PM150CSD120 pictures, PM150CSD120 price, #PM150CSD120 supplier
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Email: sales@shunlongwei.com
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FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.
b) Using new Diode which is designed to get soft reverserecovery characteristics.
•3φ 150A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication Circuits for over-current, short-Circuit, over-temperature & under-voltage(P-Fo available from upper leg devices)
• Acoustic noise-less 30kW class inverter application
• UL Recognized
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:150A
Collector current Icp:300A
Collector power dissipation Pc:781W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 920g