Sell Mitsubishi PM100RSE120 New Stock

#PM100RSE120 Mitsubishi PM100RSE120 New Mitsubishi module 100A / 1200V, PM100RSE120 pictures, PM100RSE120 price, #PM100RSE120 supplier

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Email: sales@shunlongwei.com

https://www.slw-ele.com/pm100rse120.html

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PM100RSE120 FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.

b) Using new Diode which is designed to get soft reverserecovery characteristics.

•3φ 100A, 1200V Current-sense IGBT for 15kHz switching

• 50A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 18.5/22kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:100A

Collector current Icp:200A

Collector power dissipation Pc:595W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m