ADDA Lab.

Advance Device Design and Analysis Laboratory

Department of Electrical Engineering, National Sun Yat-sen University

Welcome to ADDA LAB

先進元件設計與分析實驗室 (Advance Device Design and Analysis LAB.)成立於2013年,以培養 VLSI 產業界之技術人才為主要精神與目標。因此本實驗室之研究方向為當下 VLSI 產業界之開發主軸:先進金屬-氧化層-半導體場效電晶體(MOSFETs)為研究對象,並且以電晶體結構為基礎所發展出來之相關技術作為研究主題,包含有低溫多晶矽薄膜電晶體(LTPS-TFTs)、金屬氧化物薄膜電晶體(metal-oxide TFTs)、非揮發性記憶體(NVMs)、電阻式記憶體(RRAM)......等等。研究過程包含有半導體元件之製程實驗、量測與分析,以提供完整全面性之訓練。因此,研究生之訓練內容廣泛與深入,學生需具備高度之熱忱、專注力與毅力,並且擁有足夠之抗壓性以面對工序繁複精細與耗時的半導體元件製程,才可達到本實驗室對研究生之畢業基本要求。

Advanced Device Design and Analysis Lab. (ADDA) was established in 2013 to develop the technical expertise of VLSI industry as the main spirit and goal. Therefore, the research direction of this laboratory is the development of the current VLSI industry requirement: advanced metal - oxide - semiconductor field effect transistor (MOSFETs) as the research object, including its related technology: LTPS-TFTs, metal-oxide TFTs, nonvolatile memory (NVMs), resistive random access memory (RRAM) ... etc. The training process of master students consists of fabrication process, electrical measurement and analysis of semiconductor devices to provide complete and comprehensive training. Therefore, the training of master students is extensive and in-depth. Students need to have a high degree of enthusiasm, concentration and perseverance, and have to work well under pressure to handle the sophisticated and time-consuming semiconductor fabrication process. They are the basic requirements of master students in this laboratory.

國立中山大學電機工程學系

地址:80424 高雄市鼓山區蓮海路70號 電資大樓 EC 7023-2

電話:(07)5252000 ext.4126

Department of Electrical Engineering,

National Sun Yat-sen University, Kaohsiung 804, Taiwan

TEL:+886-7-5252000 ext. 4126