For the purpose of optoelectronic applications such as photo-catalysts or photo-detector, the basic principle is to absorb photon energy to delocalize electrons in the materials and this flow of electrons generates an electric current that can be controlled. It has been discovered that magnetic fields may be used for the purpose of modifying the absorption characteristics of light-sensitive materials. This phenomena is known in the art as “magneto-absorption (MA)”. However, the MA effect of magnetic material/semiconductor hybrid structures remains less explored. It triggers the interest of searching for a MA effect in magnetic materials/ZnO hybrid nanostructures.

Hence, in this work, a deliberately designed Co coated ZnO (Co/ZnO) hybrid nanostructures can be utilized to create the desired MA properties. Co layers were coated on the ZnO NRs. By doing so, the control of large MA across ultraviolet region can be achieved at room temperature at a relatively low magnetic field. The phenomena can be associated with the hybridization at the spin splitting band structure near Co/ZnO interfaces. Therefore, the Co/ZnO hybrid NRs can provide for magnetic field dependent capture of the energies from photons. We believe the results presented herein provide new application domains of spin-optoelectronics.