Unified and Compact Analytical Modeling of Nanoscale Gate-All-around Multigate MOSFETs

Aim

The main aim is to develop a Unified and Compact Analytical Modeling of Nanoscale Gate-All-around Multigate MOSFETs

Objectives


  • The initial objective of this proposal is to have unified and compact GAA model for CirG, SqG and RecG MugFETs based on the our developed model .

  • The existing model will be extend from subthreshold to strong region of operation to study the device behavior in the entire range of gate voltage.

  • Further, the modeling and estimation of various capacitances offered by these MugFETs will be objective.

  • ·To know about the driving capability of the device, drain current will be modeled and estimated for these MugFETs .

  • In nanoscale device dimension, quantum effects takes plays an important role hence in the existing classical model for GAA MOSFETs need to study for quantum effects as well.


Cross-sectional diagram of GAA Multigate MOSFETs (MugFETs)

India