The initial objective of this proposal is to have unified and compact GAA model for CirG, SqG and RecG MugFETs based on the our developed model .

The existing model will be extend from subthreshold to strong region of operation to study the device behavior in the entire range of gate voltage.

Further, the modeling and estimation of various capacitances offered by these MugFETs will be objective.

·To know about the driving capability of the device, drain current will be modeled and estimated for these MugFETs .

In nanoscale device dimension, quantum effects takes plays an important role hence in the existing classical model for GAA MOSFETs need to study for quantum effects as well.