2D Material Research at IIS

Rai Moriya (Ph.D)

Institute of Industrial Science, University of Tokyo

Publication list (Google Scholar)

Group's website

Rai Moriya is a research scientist at the Institute of Industrial Science, University of Tokyo. After many years of a research activity in the field of Spintronics, currently I'm working on a fundamental science and technology of two-dimensional (2D) materials. Followings are the most recent subjects in our group.

Quantum electronics with van der Waals heterostructure.
Mid- to far-infrared optoelectronics.
Magneto-thermoelectric phenomena in 2D material heterostructures.
Moiré superlattices in twisted 2D materials.

Selected publications

Followings are the publications I had significant contribution for the conceive and preparing manuscript.

Large tunneling photo-thermoelectric voltage using cyclotron resonance in bilayer graphene/MoS2/monolayer graphene van der Waals tunnel junction

Jpn. J. Appl. Phys. 63 105001 (2024)

Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/h-BN/WSe2 Junctions

ACS nano 18, 28968 (2024)

Control of Subband Energies via Interlayer Twisting in an Artificially Stacked WSe2 Bilayer

Nano Letters 24, 12211 (2024)

Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with different twist angles

Nanoscale 16, 14358 (2024)

グラフェンの物理学　ディラック電子とトポロジカル物性の基礎

Minigap-induced negative differential resistance in multilayer MoS2-based tunnel junctions

Physical Review Research 6, 033011 (2024)

Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe2

Physcical Review Research 5, 043292 (2023)

Resonant Tunneling between Quantized Subbands in van der Waals Double Quantum Well Structure Based on Few-Layer WSe2

Nano Letters 22, 4640 (2022)

Probing many-body interactions in the cyclotron resonance of h-BN/bilayer graphene/ h-BN

Physcical Review B 104, 245137 (2021)

Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction

Nano Letters 21, 3929 (2021)

Emergence of orbital angular moment at van Hove singularity in graphene/h-BN moiré superlattice

Nature Communications 11, 5380 (2020)

Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface

Appl. Phys. Lett. 117, 153101 (2020)

3D manipulation of 2D materials using micro-dome polymer

Nano Letters 20, 2486 (2020)

Superconducting proximity effect in a NbSe2/graphene van der Waals junction

Physical Review B 101, 054503 (2020)

Photo-Nernst detection of cyclotron resonance in partially irradiated graphene

Applied Physics Letters 115, 153102 (2019)

Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface

Applied Physics Letters 115, 143101 (2019)

Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate

npj 2D Materials and Applications 3, 22 (2019)

Photo-thermoelectric detection of cyclotron resonance in asymmetrically carrier-doped graphene two-terminal device

Applied Physics Letters 113, 103102 (2018)

Heat transfer at the van der Waals interface between graphene and NbSe2

Physical Review B 98, 035422

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

2D Materials 4, 041007

Optical coupling between atomically thin black phosphorus and a two dimensional photonic crystal nanocavity

Applied Physics Letters 110, 223105

N-and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

Japanese Journal of Applied Physics 56, 04CK09

Supercurrent in van der Waals Josephson junction

Nature Communications 7, 10616

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Applied Physics Letters 107, 103107

Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy

Applied Physics Express 9, 063006

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Applied Physics Letters 107, 023109

Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

Applied Physics Letters 106, 223103

Modulation of schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current on–off ratio

Japanese Journal of Applied Physics 54, 04DJ04

Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

Applied Physics Letters 105, 223109

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Applied Physics Letters 105, 083119

Cubic rashba spin-orbit interaction of a two-dimensional hole gas in a strained-Ge/SiGe quantum well

Physical review letters 113, 086601

Electrical spin injection into graphene through monolayer hexagonal boron nitride

Applied Physics Express 6, 073001

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