Sell Toshiba MG100Q2YS51 New Stock

MG100Q2YS51 100A/1200V/IGBT/2U; MG100Q2YS51

• Part Number: MG100Q2YS51
• Category: IGBT Module
• Manufacturer: Toshiba
• Packaging: IGBT Module
• Data Code: 2019+
• Qty Available: 112

Toshiba MG100Q2YS51 New 100A/1200V/IGBT/2U, MG100Q2YS51 pictures, MG100Q2YS51 price, MG100Q2YS51 supplier

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MG100Q2YS51 Description

N CHANNEL IGBT (HIGH PWER SWITCHING; MOTOR CONTROL APPLICATIONS);

Collector-emitter voltage VCES:1200 V

Gate-emitter voltage VGES:±20 V

Collector current DC IC (25°C / 80°C) 150 / 100A

Collector current 1ms ICP (25°C / 80°C) 300 / 200A

Forward current DC IF:100A

Forward current 1ms IFM 200A

Collector power dissipation (Tc = 25°C) PC:660 W

Junction temperature Tj:150 °C

Storage temperature range Tstg:−40 ~ 125 °C

Isolation voltage VIsol 2500 (AC 1 min.) V

Screw torque (Terminal / mounting) ― 3 / 3 N·m

Gate leakage current IGES VGE = ±20V, ±500 nA