A Marie Skłodowska-Curie Postdoctoral Fellowship Project
MEFF aims to advance our understanding of fluorite-structured ferroelectric materials, focusing on the design and optimization of HfO₂ thin films.
Combining AI-guided data analysis, pulsed laser deposition (PLD), and advanced electrical characterization, the project explores how oxygen vacancies and dopant engineering can enhance memory performance and energy efficiency.
The outcomes will contribute to the development of next-generation non-volatile memories and energy storage devices for sustainable electronics.
Dr. Faizan Ali – MSCA Postdoctoral Fellow, leading the MEFF project.
Host: Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC).
Supervisor: Prof. Florencio Sánchez
Co-supervisor: Dr. Ignais Fina
MEFF will create reliable, high-performance ferroelectrics for sustainable memory and energy storage, driving innovation in next-generation electronics.
Recent:
"Intrinsic Ferroelectric Polarization in Doped HfO₂ and ZrO₂" (Small 2025, Just Accepted).
"Control of Fast Ferroelectric Switching in Hf₀.₅Zr₀.₅O₂ Films via Growth Atmosphere Engineering" (Under review, Small Science).
Upcoming: 1. Machine learning–driven prediction of ferroelectric properties in HfO₂-based thin films.
2. Artificial Intelligence in Fluorite-structured Ferroelectric Materials: From Discovery to Optimization.
Focus areas: endurance–retention improvement, energy storage optimization, and AI-based reliability predictions.
This section will be regularly updated with new publications.
Dr. Faizan Ali
MSCA Postdoctoral Fellow – MEFF Project
Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC)
Email: faizanali@icmab.es
Acknowledgement
This project has received funding from the European Union’s Horizon Europe research and innovation programme under the Marie Skłodowska-Curie grant agreement.