Course contents:

1. Course introduction (PDF)(Resistor-model-equations)

2. Silicon atom: bond and band model (PDF) 

3. Intrinsic semiconductor, Thermal equilibrium (PDF)

4. Fermi-Dirac distribution (PDF)

5. Electron concentration in conduction band (PDF) 

6. Hole concentration in valence band (PDF) 

7. Intrinsic carrier concentration, Intrinsic Fermi level (PDF)  

8. n-type and p-type semiconductors (PDF)

9. Law of mass action (PDF) 

10. Charge neutrality, Non-degenerate semiconductors (PDF)  

11. Drift current (PDF) 

12. Diffusion current and Position of Fermi level (PDF)   

13. Non-uniform doping and Electric Field (Ex) (PDF) 

14. Non-uniform doping and Fermi-level at J=0 (PDF)  

15. Hall effect and its applications (PDF) 

16. Carrier Generation and Recombination (PDF)  

17. Continuity equation (PDF)  

Problem Set-1 (PDF)  

Assessment Exam-1 (Questions) (Solutions)  

18. PN Junction: Energy-band diagram and Vbi (zero bias) (PDF)   

19. PN Junction: Electric field (zero bias) (PDF)  

20. PN Junction: Vx and depletion region width (zero bias) (PDF) 

21. PN Junction: Energy-band diagram (reverse bias) (PDF) 

22. PN Junction: Emax, Cj, & One-sided junctions (reverse bias) (PDF) 

23. PN Junction: Reverse bias junction breakdown (PDF) 

24. PN Junction: Linearly graded junctions (PDF)  

25. PN Junction: Forward bias I-V characteristics (PDF)

26. PN Junction: Summary of I-V characteristics (PDF)(Datasheet)

Problem Set-2 (PDF)  

27. Diode circuits: Models (PDF)  

28. Diode circuits: Voltage clipping/clamping circuits

29. Diode circuits: Halfwave rectifier (1)

30. Diode circuits: Halfwave rectifier (2) 

31. Diode circuits: Fullwave rectifier, Voltage regulation

32. Diode circuits: Voltage controlled capacitor and BPF

33. Diode circuits: Voltage doubler 

34. Voltage amplifier properties 

35. BJT: PNP zero bias condition

36. BJT: NPN zero bias condition

37. BJT: Regions of operation

38. BJT: I-V characteristics and small signal parameter

39. BJT: Hybrid PI model

40. BJT: Current Gain

41. BJT circuits: Common Emitter (CE) amplifier

42. BJT circuits: CE amplifier with simple biasing

43. BJT circuits: CE amplifier with voltage divider biasing

44. BJT circuits: CE amplifier with emitter degeneration

45. BJT circuits: Common Base (CB) and Common Collector (CC) amplifier

46. Process technology

47. MOSFET: Device structure

48. MOSFET: Threshold voltage and channel behavior

49. MOSFET: Regions of operation and I-V characteristic

50. MOSFET: DC biasing and Small signal model

51. MOSFET: Capacitance and Transit frequency

52. MOSFET: Second order effects