Semiconductor Physics and Devices
Semiconductor Physics and Devices
Course contents:
1. Course introduction (PDF)(Resistor-model-equations)
2. Silicon atom: bond and band model (PDF)
3. Intrinsic semiconductor, Thermal equilibrium (PDF)
4. Fermi-Dirac distribution (PDF)
5. Electron concentration in conduction band (PDF)
6. Hole concentration in valence band (PDF)
7. Intrinsic carrier concentration, Intrinsic Fermi level (PDF)
8. n-type and p-type semiconductors (PDF)
9. Law of mass action (PDF)
10. Charge neutrality, Non-degenerate semiconductors (PDF)
11. Drift current (PDF)
12. Diffusion current and Position of Fermi level (PDF)
13. Non-uniform doping and Electric Field (Ex) (PDF)
14. Non-uniform doping and Fermi-level at J=0 (PDF)
15. Hall effect and its applications (PDF)
16. Carrier Generation and Recombination
17. Continuity equation,
Direct & Indirect BandGap semiconductors
Problem Set-1 (PDF)
18. PN Junction: Energy-band diagram and Vbi (zero bias)
19. PN Junction: Electric field (zero bias)
20. PN Junction: Vx and depletion region width (zero bias)
21. PN Junction: Energy-band diagram (reverse bias)
22. PN Junction: Emax, Cj, & One-sided junctions (reverse bias)
23. PN Junction: Reverse bias junction breakdown and Linearly graded junctions
24. PN Junction: Forward bias minority carrier concentration
25. PN Junction: Forward bias I-V characteristics
26. Diode circuits: Voltage clipping/clamping circuits
27. Diode circuits: Halfwave rectifier (1)
28. Diode circuits: Halfwave rectifier (2)
29. Diode circuits: Fullwave rectifier, Voltage regulation
30. Diode circuits: Voltage controlled capacitor and BPF
31. Diode circuits: Voltage doubler
32. Voltage amplifier properties
33. BJT: PNP zero bias condition
34. BJT: NPN zero bias condition
35. BJT: Regions of operation
36. BJT: I-V characteristics and small signal parameter
37. BJT: Hybrid PI model
38. BJT: Current Gain
39. BJT circuits: Common Emitter (CE) amplifier
40. BJT circuits: CE amplifier with simple biasing
41. BJT circuits: CE amplifier with voltage divider biasing
42. BJT circuits: CE amplifier with emitter degeneration
43. BJT circuits: Common Base (CB) and Common Collector (CC) amplifier
44. Process technology
45. MOSFET: Device structure
46. MOSFET: Threshold voltage and channel behavior
47. MOSFET: Regions of operation and I-V characteristic
48. MOSFET: DC biasing and Small signal model
49. MOSFET: Capacitance and Transit frequency
50. MOSFET: Second order effects
Reference textbooks:
1. "Semiconductor Physics and Devices (Basic Principles)", Donald A. Neamen, (4th edition)
2. "Semiconductors Devices, Physics and Technology", S.M. Sze and M. K. Lee
3. "Fundamentals of Microelectronics", Behzad Razavi (2nd edition)
4. "Microelectronic Circuits", Adel S. Sedra and Kenneth C. Smith (7th edition)
5. "Electronic Devices and Circuits", Jacob Millman and Christos C Halkias
6. "Design of Analog CMOS Integrated Circuits", Behzad Razavi (2nd edition)