† Equal contribution, * Corresponding author
1. H. Cho, J. Huang, S. Yang, W. Zhu, S. Im, S. Park, J. Yeo, J. Lee, Y. Shin, D.-S. Lee, T.-E. Park, J. Kang, K. Ko*, J. Suh*, "A universal van der Waals tunneling injector for monolayer CMOS," Submitted (2026)
2. Y. I. Noh, Y. Jung, S. Lee, E. Oleiki, J. M. Hong, C. U. Kim, S. Lee, Y. Cho, S. Yang, K. Ko, J. B. Kim, J. Suh, S. I. Seok, G. Lee, C. Yang, J.-K. Lee, K. J. Choi, "Integrated molecular and optical materials design for high-efficiency perovskite/Si tandem cells ," Submitted (2026).
1. J. Yeo, S. Lim, S. Singh, T. W. Kim, S. Oh, C. E. Stevens, J. R. Hendrickson, M. Jang, K. Ko, H. Y. Jeong, D. Jariwala, J. Suh*, J.-U. Lee*, “Laterally confined monolayer WS2 nanodots for enhanced excitonic interaction,” Nano Letters 25, (2025).
2. J. Kwon, H. Cho, K. Ko, H. Kim, S. Yang, J. Yeo, K. H. Lee, H.-H. Cho, J. Suh*, “Field-programmable bimodal switching in a hybrid-dual-gated MoS2 transistor,” Nano Letters 25, 12585 (2025).
3. K. Ko, J. Huang, J. Kwon, M. Jang, H. Cho, S. Yang, S. Kim, S. Park, T. Taniguchi, K. Watanabe, D.-Y. Lin, S. Singh, D.-H. Lim, S. Tongay, J. Kang*, J. Suh*, “Competition between intrinsic and extrinsic charge carrier conduction in p-doped MoS2: Interaction with gate dielectric matters” ACS Nano 19, 1630 (2024).
4. K. Ko, D.-H. Lim, J. Suh*, “Unified model for trap-limited conduction via field-driven interactions and Poole-Frenkel emission,” IEEE Transactions on Electron Devices 72, 796 (2024).
5. S. Kim, W. Lee, K. Ko, H. Cho, H. Cho, S. Jeon, C. Jeong, S. Kim*, F. Ding*, J. Suh*, “Phase-centric MOCVD enabled synthetic approaches for wafer-scale 2D tin selenides,” Advanced Materials 36, 2400800 (2024).
6. K. Ko, M. Jang, J. Kwon, J. Suh*, “Native point defects in 2D transition metal dichalcogenides: a perspective bridging intrinsic physical properties and device applications,” Journal of Applied Physics 135, 100901 (2024).
7. H. Cho, D. Lee, K. Ko, D.-Y. Lin, H. Lee, S. Park, B. Park, B. Jang, D.-H. Lim*, J. Suh*, “Double floating-gate van der Waals transistor for high-precision synaptic operations,” ACS Nano 17, 7384 (2023).
8. H. Sun†, F. Liu†, L. Zhang†, K. Ko†, B. McLean, H. An, S. Kim, M. Huang, M.-G. Willinger, R. Ruoff, J. Suh*, Z. Wang*, F. Ding*, “Bottom-up growth of graphene nanospears and nanoribbons,” Advanced Functional Materials 32, 2206961 (2022).
9. J. Kim, K. Ko, H. Kwon, J. Suh*, H.-J. Kwon*, J.-H. Yoo*, “Channel scaling dependent photoresponse of copper-based flexible photodetectors using laser-induced oxidation,” ACS Applied Materials & Interfaces 14, 6977 (2022).
10. H. Kwon, J. Kim, K. Ko, M. J. Matthews, J. Suh*, H.-J. Kwon*, J.-H. Yoo*, “Laser-induced digital oxidation for copper-based flexible photodetectors,” Applied Surface Science 540, 148333 (2021).