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[1] Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto, 6th International Symposium on Growth of III-Nitrides (ISGN-6) 2015年11月11日. [Young Scientist Award]

[2] Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy, Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Applied Physics Express 9, 125601 (2016).

[3] Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 2017年9月30日. [Outstanding Presentation Award]

[4] Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy, Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu, Japanese Journal of Applied Physics 56, 070304 (2017).

[5] 窒化物半導体MOVPEの熱力学解析 ～面方位依存性～, 寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯, 日本結晶成長学会誌 43, 233 (2017)

[6] 窒化物半導体の表面構造と成長過程に関する理論的研究, 草場 彰, 九州大学学位論文 (2019).

[7] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions, Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa, Japanese Journal of Applied Physics 58, SC1014 (2019).

[8] Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions, Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa, Japanese Journal of Applied Physics 59, 028003 (2020).