저희 연구실에서는 함께 연구할 석사 및 박사 과정 대학원생을 모집하고 있습니다.
SiC 및 WBG 전력반도체 소자 연구에 관심이 있다면,
아래 이메일로 연락 주세요: thkil [at] khu.ac.kr
We focuses on the development of silicon carbide (SiC) devices for advanced power electronics.
By exploring innovative device structures and emphasizing interface control, we aim to enhance performance, reliability, and efficiency of SiC MOSFETs and related power devices.
This work supports next-generation applications such as electric vehicles, renewable energy systems, and high-speed rail power converters.
We investigate advanced semiconductor materials such as Ga₂O₃, AlN, Diamond, that enable the next generation of high-performance power devices.
Our research explores the importance of dielectric materials in shaping the field of wide-bandgap semiconductors.
We are broadly interested in how these materials influence the behavior and potential of advanced power devices.
Through this work, we aim to contribute to the ongoing development of next-generation power electronics.