IsseI Suzuki  

Senior Assitant Professor
Doctor of engineering
Omata Lab at Tohoku Univ., Japan

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issei.suzuki [at] tohoku.ac.jp 

Hello, here is my personal Homepage. I am writing this from Japan.
While social networking already became something of a must, I still like the old-fashioned "homepage" like here.
Please feel free to contact me by email or ResearchGate.

Experience

Education

Research interests and topics

I have been working on functional inorganic materials since 2011. 

Keywords: Inorganic materials /  β-CuGaO2, β-AgGaO2, β-LiGaO2 /  Tin sulfide (SnS) / Proton conductors /
Ion-exchange / First-principles calculation / Photovoltaics / Interface analysis / XPS

Synthesis of novel oxide semiconductors via ion-exchange

β-CuGaO2, which is an oxide semiconductors with extremely rare physical properties, was synthesized for the first time by me and my colleagues in 2014; it is the only oxide semiconductor having a direct band gap in NIR region and exhibit p-type conduction. I have recently been developing its thin-film technique to apply it to the PVs. An invited review paper summarizing the research of β-CuGaO2 and related materials has been published (link).

n-type SnS and their application to the photovoltaics

SnS is expected as an absorber of the next generation PVs. Homojunction of SnS is predicted to have higher efficiency than heterojunction (e.g., p-SnS/n-CdS), it is known to be difficult to fabricate n-type SnS. I have been working on synthesis of n-type SnS in a collaboration with Univ. of Yamanashi and NREL since 2018.

Electrolyte and electrode Intermediate temperature fuel cells

Intermediate temperature fuel cells (ITFCs) have been expected as the next-generation energy source since a long time ago; however, proper electrolyte and electrode are yet to be established. I have been working on the electrolyte and electrode for protonic fuel cells since 2018. 

First principles calculations of novel inorganic materials

First-principles calculation is a great tool to predict the physical properties of novel materials or materials that do not yet exist while I think I am one of the experimentalists. It was used to evaluate the physical properties of β-CuGaO2 and its related materials. By comparing the electronic structures of polymorphic oxide semiconductors, relationship b/w their crystal structure and  physical properties were clarified.

XPS analysis of the electronic structure at interfaces

Band alignment and band bending of the semiconductors at the interfaces can be clarified by XPS analysis. Very recently, I have clarified that the oxide semiconductor containing monovalent Cu, β-CuGaO2 and α-CuGaO2, has a limitation in Fermi level energy because of reduction and oxidation of Cu at the interface.

Publications

44. "Replacing Sodium Ions with Protons in Vanadophosphate Glass: 

Suppression of Electronic Conduction by Local Structural Change around Vanadium Ions"

A. Sharma, I. Suzuki, K. Toyooka, T. Ishiyama, J. Nishii, T. Omata

J. Phys. Chem. C 28, 9793–9801 (2024)

43. "Designing Topotactic Ion-Exchange Reactions in Solid-State Oxides Through First-Principles Calculations"

I. Suzuki, M. Kita, T. Omata
Chem. Mater., 36, 4196-4203 (2024)

42. "Low-temperature growth of BaZrO3 and Ba(Zr,Y)O3 thin films via spray pyrolysis deposition"

I. Suzuki, H. Tawarayama, M. Majima, T. Omata
Thin Solid Films, 792, 140249 (2024)

41. "Alkali Mono-Pnictides: A New Class of Photovoltaic Materials by Element Mutation"

Y. Kumagai, S. R. Kavanagh, I. Suzuki, T. Omata, A. Walsh, D. O. Scanlon, H. Morito
PRX Energy, 2, 043002 (2023)

40. "Carrier control in SnS by doping: A review"

I. Suzuki
J. Ceram. Soc. Jpn. 131, 777-788 (2023)

39. "Enhancing proton mobility and thermal stability in phosphate glasses with WO3: 

The mixed glass former effect in proton conducting glasses"

S. Aman, I. Suzuki, T. Ishiyama, T. Omata
Phys. Chem. Chem. Phys., 25, 18766-18774  (2023)

38. "High open-circuit voltage in single-crystalline n-type SnS/MoO3 photovoltaics"

I. Suzuki, Z. Lin, T. Nogami, S. Kawanishi, B. Huang, A. Klein, T. Omata
APL Mater., 11, 031116 (2023)

37. "Pulsed laser deposition of β-NaGaO2: significant dependence of sodium fraction, 

morphology, and phases of the film on deposition position in the plume"

S. Suzuki, I. Suzuki, T. Omata
Jpn. J. Appl. Phys. 62, 035502 (2023)

36. "Experimental Identification of Atomic Orbital Contributions to SnS Valence 

Band using Polarization-Dependent Angle-Resolved Photoemission Spectroscopy"

I. Suzuki, S. Kawanishi, K. Tanaka, T. Omata, S. Tanaka
Phys. Status Solidi B, 260, 2200408 (2023)

35. "Avoiding Fermi level pinning at SnS interface for high open-circuit voltage"

I. Suzuki, B. Huang, S. Kawanishi, T. Omata, A. Klein
J. Phys. Chem. C, 126, 20570 (2022)

34. "Phase transformation of metastable Cu2ZnGeO4 with a wurtz–kesterite structure at elevated temperatures"

M. Kita, I. Suzuki, M. Wada, T. Omata
Inorg. Chem., 61, 35, 13700-13707 (2022)

33. "Current status of n-Type SnS: Paving the way for SnS homojunction solar cells" [Invited  review]

I. Suzuki, S. Kawanishi, T. Omata, H. Yanagi
J. Phys. Energy, 4, 042002 (2022)

32. "Growth of β-NaGaO2 thin films using ultrasonic spray pyrolysis"

I. Suzuki,  S. Suzuki,  T. Watanabe,  M. Kita,  T. Omata
J. Asian Ceram. Soc., 10, 2, 520-529 (2022)

31. "Contribution of the Sn 5s state to the SnS valence band: direct observation via ARPES measurements"

I. Suzuki, S. Kawanishi, K. Tanaka, T. Omata, S. Tanaka
Electronic Structure, 4, 025004 (2022)

30. "Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement"

I. Suzuki, Z. Lin, S. Kawanishi, K. Tanaka, Y. Nose, T. Omata, S. Tanaka
Phys. Chem. Chem. Phys., 24, 634-638 (2022)

29. "First Principles Calculation of Electrical and Optical Properties of Cu3AsO4: 

Promising Thin-Film Solar Cell Absorber from Nonferrous Metal Manufacturing By-Products"

I. Suzuki, S. Kawanishi, N. Ohashi, A. Gomi, J. Kano, H. Watanabe, S. Asano, T. Omata
Mater. Trans., 63, 73-81 (2022)

28. "Anhydrous Silicophosphoric Acid Glass: Thermal Properties and Proton Conductivity"

T. Omata, A. Sharma, I. Suzuki, T. Ishiyama, S. Kohara, K. Ohara, M. Ono, Y. Ren, K.  Zagarzusem, M. Fujioka, G. Zhao, J. Nishii
ChemPhysChem, 22, e2021008(2022)

27. "N-Type Electrical Conduction in SnS Thin Films"

I. Suzuki, S. Kawanishi, S. R. Bauers, A. Zakutayev, Z. Lin, S. Tsukuda, H. Shibata, M. Kim, H. Yanagi, T. Omata
Phys. Rev. Mater.,  5, 125405. (2021)

26. "Investigating the role of GeO2 in enhancing the thermal stability 

and proton mobility of proton-conducting phosphate glasses"

T. Omata, A. Sharma, T. Kinoshita, I. Suzuki, T. Ishiyama, S. Kohara, K. Ohara, M. Ono, T. Fang, Y. Ren, M. Fujioka, G. Zhao, J. Nishii
J. Mater. Chem. A. 9, 20595−20606 (2021)

25. "SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film"

S. Kawanishi, I. Suzuki, S. R. Bauers, A. Zakutayev, H. Shibata, H. Yanagi, T. Omata
Solar RRL, 5, 2000708 (2021)

24. "Understanding the effect of oxide components on proton mobility 

in phosphate glasses using a statical analysis approach”

T. Omata, I. Suzuki, A. Sharma, T. Ishiyama, J. Nishii, T. Yamashita, H. Kawazoe
RSC Adv. 11, 3012−3019(2021)

23. "Fermi Energy Limitation at β-CuGaO2 Interfaces Induced by Electrochemical Oxidation/Reduction of Cu"

I. Suzuki, B. Huang, T. Omata, and A. Klein
ACS Appl. Energy Mater.,3, 9117-9125 (2020)

22. "Growth of Large Single Crystals of n-Type SnS from Halogen-Added Sn Flux"

S. Kawanishi, I. Suzuki, T. Ohsawa, N. Ohashi, H. Shibata, T. Omata
Cryst. Growth Des., 20, 5931-5939 (2020)

21. "Ultra-thin phosphate glass exhibiting high proton conductivity at intermediate temperatures"

I. Suzuki, M. Tashiro, T. Yamaguchi, T. Ishiyama, J. Nishii, T. Yamashita, H. Kawazoe,T. Omata,
Int. J. Hydrogen Energy, 45, 16690-16697 (2020)

20. “Comprehensive first-principles study of AgGaO2 and CuGaO2 polymorphs”

I. Suzuki, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi, T. Omata
J. Ceram. Soc. Jpn. 127, 339-347 (2019)

19. “Tunable Direct Band Gap of β-CuGaO2 and β-LiGaO2 Solid Solutions in the Full Visible Range”

I. Suzuki, Y. Mizuno, T. Omata
Inorg. Chem. 58, 4262-4267 (2019)

18. "The energy level of the Fe2+/3+-transition in BaTiO3 and SrTiO3 single crystals"

I. Suzuki, L.Gura, A. Klein
Phys. Chem. Chem. Phys. 21, 6238 (2019)

17. "Flux Growth of β-NaGaO2 Single Crystals"

I. Suzuki, A. Kakinuma, M. Ueda, T. Omata
J. Cryst. Growth. 504, 26-30 (2018)

16. "Controlling the electrical conductivity of ternary wurtzite-type and metastable β-AgGaO2 by impurity doping"

H. Nagatani, I. Suzuki, S. Takemura, S. Fujimoto, T. Omata
AIP Advances, 8, 85203-1-9 (2018)

15. "Wurtzite-derived quaternary oxide semiconductor Cu2ZnGeO4; 

its structural characteristics, optical properties and electronic structure"

M. Kita, I. Suzuki, N. Ohashi, T. Omata
Inorg. Chem. 56, 14277−14283 (2017)

14. "Orientation control of β-NaGaO2 thin film: a precursor for β-CuGaO2 as a thin-film solar cell absorber"

I. Suzuki, M. Tanemura, T. Omata
J. Ceram. Soc. Jpn., 125, 872-875 (2017)

13. "Fabrication of β-CuGaO2 thin-films by ion-exchange of β-NaGaO2 thin-films"

I. Suzuki, H. Nagatani, M. Kita, T. Omata
Appl. Phys. Express 10, 095501(2017)

12. "Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2"

H. Nagatani, Y. Mizuno, I. Suzuki, M. Kita, N. Ohashi, T. Omata
J. Appl. Phys. 121, 235103 (2017)

11. "Multinary wurtzite-type oxide semiconductors: present status and perspectives"

I. Suzuki, T. Omata
Semicond. Sci. Technol. 32, 013007(2017)

10. "First-principles study of CuGaO2 polymorphs: Delafossite α-CuGaO2 and wurtzite β-CuGaO2"

I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi, T. Omata
Inorg. Chem. 55, 7610−7616(2016)

9. "First principles calculations of ternary wurtzite β-CuGaO2"

I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi, T. Omata
J. Appl. Phys. 119, 095701 (2016)

8. "Wurtzite-derived ternary I-III-O2 semiconductors"

T. Omata, H. Nagatani, I. Suzuki, M. Kita
Sci. Technol. Adv. Mater. 16, 024902 (2015)

7. "Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥10 cm2V−1s−1"

H. Yanagi, C. Sato, Y. Kimura, I. Suzuki, T. Omata, T. Kamiya, H. Hosono
Appl. Phys. Lett. 106, 082106 (2015)

6. "Structural and thermal properties of a ternary narrow gap oxide semiconductor; wurtzite-derived β-CuGaO2"

H. Nagatani, I. Suzuki, M. Kita, M. Tanaka, Y. Katsuya, O. Sakata, S. Miyoshi, S. Yamaguchi, T. Omata
Inorg. Chem. 54, 1698−1704 (2015)

5. "Structure of β-AgGaO2; ternary I-III-VI2 oxide semiconductor with a wurtzite-derived structure"

H. Nagatani, I. Suzuki, M. Kita, M. Tanaka, Y. Katsuya, O. Sakata and T. Omata
J. Solid State Chem. 222, 66–70 (2015)

4. "Wurtzite CuGaO2: A direct and narrow band gap oxide semiconductor applicable to solar cell absorber"

T. Omata, H. Nagatani, I. Suzuki, M. Kita, H. Yanagi and N. Ohashi,
J. Am. Chem. Soc. 136, 3378-3381 (2014)

3. "Pseudo-Binary Alloying System of ZnO-AgGaO2 Reducing the Energy Band Gap of Zinc Oxide"

I. Suzuki, H. Nagatani, Y. Arima, M. Kita and T. Omata,
Appl. Phys. Lett. 103, 222107 (2013)

2. "Fabrication of β-AgGaO2 thin film by rf-magnetron sputtering"

I. Suzuki, H. Nagatani, Y. Arima, M. Kita and T. Omata,
Thin Solid Films, 559, 112-115 (2013)

1. "Fabrication of ZnF2 Thin Films and Their Vacuum Ultraviolet Transparency"

I. Suzuki, T. Omata, Y. Shiratsuchi, R. Nakatani, N. Kitamura, S. Otsuka-Yao-Matsuo,
Thin Solid Films, 534, 508-514 (2013)

Conference talks 

Talks to come

Previous talks (International conf. only) 

Other activities and achievements

Press release

Committee and referee

Funding (as a representative researcher only)

Patent

Honors and awards