Sell Infineon IFS150B12N3T4_B31 New Stock

#IFS150B12N3T4_B31 Infineon IFS150B12N3T4_B31 New Technische Information IGBT Module VCES 1200V 150A , IFS150B12N3T4_B31 pictures, IFS150B12N3T4_B31 price, #IFS150B12N3T4_B31 supplier

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Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 150 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 300 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot750 W

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V

Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

Gewicht Weight 300g