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#FF400R33KF2C Infineon FF400R33KF2C New 3300 V, 400 A dual IGBT module, 3300V 400A DUAL, FF400R33KF2C pictures, FF400R33KF2C price, #FF400R33KF2C supplier
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IHV A 3300 V, 400 A 130 mm dual IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications.
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 3300 V
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25 C: 660 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 4.8 kW
Package / Case: IHM
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Height: 38 mm
Length: 140 mm
Series: IGBT2
Technology: Si
Width: 130 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 2
Subcategory: IGBTs
Part # Aliases: SP000100614 FF400R33KF2CNOSA1
3300 V, 400 A dual IGBT module, 3300V 400A DUAL
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