Aim

Evaluation of Stability and Performance analysis of reliable 3D Cyl GAA-TFET based 6T SRAM cell

Objectives


  • Device Design of 3D Cyl GAA-TFET

    1. The initial objective of this proposal is to design and optimize the proposed GAA-TFET device based on our previous work target for SRAM applications.

    2. Study and analysis of spacer and hetero-dielectric characteristics using 3D Synopsys TCAD

  • Development of Verilog-A device model

    1. Design and development of BSIM-CNG equivalent model using Verilog-A for the proposed device

    2. Extraction of the device parameters such as I DS, I GS, C gs, C gd, C sd within the entire working range

  • Design and Analysis of low power 3D-TFET based SRAM

    1. Evaluation of static, dynamic, and performance parameters of the proposed memory cell

    2. Analysis of digital parameters with the proposed bio-molecule sensor SRAM architecture such as static noise margin, delay time, and read /write operation using EDA and 3D TCAD Tool.

  • Reliability and Stability analysis of the proposed memory design

  1. Analysis of NBTI and PBTI on the proposed memory circuit using effects of trap investigation on the proposed structure.

  2. Study of phonon and charge trap assisted tunneling on the proposed memory circuit.

Funding Agency

Scientist Pool Scheme of CSIR, HRDG, Govt. of India


India