CM75DU-12F POWEREX CM75DU-12F IGBT Array & Module Transistor N Channel 75 A 600 V 290 W 600 V Module; CM75DU-12F
Part Number: CM75DU-12F
Category: IGBT Module
Manufacturer: MITSUBISHI
Packaging: IGBT Module
Data Code: 2014+
Qty Available: 217
The CM75DU-12F is a 600V Dual IGBTMOD™ Trench Gate Design Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate offering simplified system assembly and thermal management. Low drive power Low Vce (sat) Discrete super-fast recovery free-wheel diode Isolated baseplate for easy heat sinking
MITSUBISHI CM75DU-12F New POWEREX CM75DU-12F IGBT Array & Module Transistor N Channel 75 A 600 V 290 W 600 V Module, CM75DU-12F pictures, CM75DU-12F price, CM75DU-12F supplier
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Collector Emitter Voltage V(br)ceo: 600V
Collector Emitter Voltage Vces: 600V
DC Collector Current: 75A
No. of Pins: 7
Operating Temperature Max: 150°C
Operating Temperature Min: -40°C
Power Dissipation Pd: 290W
SVHC: To Be Advised
Transistor Case Style: Module
Transistor Polarity: N Channel
POWEREX CM75DU-12F IGBT Array & Module Transistor N Channel 75 A 600 V 290 W 600 V Module