Sell Mitsubishi CM600YE2N-12F New Stock

Sell Mitsubishi CM600YE2N-12F New Stock

CM600YE2N-12F HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 1700V/600A/6200W;

Part Number: CM600YE2N-12F

Category: IGBT Module

Manufacturer: Mitsubishi

Packaging: IGBT Module

Data Code: 2020+

Qty Available: 48

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CM600YE2N-12F HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Collector-emitter voltage VCES VGE = 0V 1700V

Gate-emitter voltageVCES VCE = 0V ±20V

Collector current IC 600A

Collector current ICM 1200A

Maximum collector dissipation TC = 25°C, IGBT part 6200W

Junction temperature Tj –40 ~ +150°C

Storage temperature Tstg –40 ~ +125°C

Isolation voltage Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.4000V

Typical value 1.5 kg