MITSUBISHI CM150RL-12NF New Stock

#CM150RL-12NF MITSUBISHI CM150RL-12NF New MITSUBISHI Insulated IGBT Modules High power switching use Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, 7-elements in a pack, #CM150RL_12NF

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Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:150A

Collector current Icp:300A

Collector power dissipation Pc:430W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.5~3.5 N·m

Weight Typical value 350g