Embedded Files
-------------------------------------------------------------------
Email: sales@shunlongwei.com
https://www.slw-ele.com/bsm200ga12dn2.html
-------------------------------------------------------------------
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Part No: BSM200GB120DN2
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 300 A
Gate-Emitter Leakage Current: 200 nA
Pd - Power Dissipation: 1550 W
Package / Case: 62 mm
Minimum Operating Temperature: - 40°C
Maximum Operating Temperature: + 150°C
Packaging: Tray
Height: 36.5 mm
Length: 106.4 mm
Technology: Si
Width: 61.4 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Page updated
Google Sites
Report abuse