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BSM10GD120DN2 IGBT: 10A1200V;IGBT Modules 1200V 10A FL BRIDGE ; BSM10GD120DN2

Eupec BSM10GD120DN2 New IGBT: 10A1200V;IGBT Modules 1200V 10A FL BRIDGE , BSM10GD120DN2 pictures, BSM10GD120DN2 price, #BSM10GD120DN2 supplier

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BSM10GD120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 15 A

Gate-Emitter Leakage Current: 120 nA

Pd - Power Dissipation: 80 W

Package / Case: EconoPACK 2

Maximum Operating Temperature: + 150 C

Packaging: Bulk

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10