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#6MBI200FB-060 Fuji 6MBI200FB-060 New Insulated Gate Bipolar Transistor 200A I(C) 600V V(BR)CES N-Channel, 6MBI200FB-060 pictures, 6MBI200FB-060 price, #6MBI200FB-060 supplier
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Manufacturer Part Number: 6MBI200FB-060
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Package Description: FLANGE MOUNT, R-PUFM-X11
Manufacturer: Fuji Electric Co Ltd
Collector Current-Max (IC): 200 A
Collector-Emitter Voltage-Max: 600 V
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-PUFM-X11
Number of Elements: 6
Number of Terminals: 11
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 500 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 1500 ns
Turn-on Time-Nom (ton): 1500 ns
VCEsat-Max: 2.5 V
Insulated Gate Bipolar Transistor 200A I(C) 600V V(BR)CES N-Channel
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