"Study on the Electrical Conduction Mechanism of Bipolar Resistive Switching on Prussian Blue Thin Films"

Autores: Lindiomar Borges Avila, Christian K. Müller, Dirk Hildebrand, Fabrício L. Faita, Bruna F. Baggio, Cristiani C. Plá Cid, André A. Pasa.

Instituições: Universidade Federal de Santa Catarina.

Autor apresentador: Lindiomar Borges de Avila Junior.

Resumo: Memristors are electronic components that relates the current and voltage in a non-linear form. They are two-terminal non-volatile memory devices based on resistance switching effects. The theoretical modeling of this component was first presented in the early 1970 [1], but only in 2008 the effect was observed in laboratory. Nowadays, several companies and research teams are working to develop these devices for commercial applications, from neuromorphic computing to non-volatile memories [2,3]. In this work we investigate the electrical properties associated to the phenomenon of Resistivity Switching (RS) in Prussian Blue (PB) thin films and their derivatives obtained by electrodeposition. The PB is a ferrocyanide complex with semiconductor properties [4], and at the best of our knowledge, this material has not been associated to RS effect so far. The structural and morphological properties of the films were characterized by scanning electron microscopy (SEM-FEG), and highly oriented coordination network and crystalline compound is observed in the films. The electrical measurements were made on ambient conditions in capacitor type structures, with upper and lower electrical contacts of Ag and Au, respectively. The RS behavior is observed through the I-V curves (from -1.5 to 1.5 V), with set and reset potentials well established at -0.6 and 0.6 volts, respectively. PB films showed a RS effect with HRS/LRS (HighResistance-State/Low-Resistance-State ratio) of tree orders of magnitude ( ), maintaining the RS effect stable over 200 cycles, suggesting good stability and nonvolatility. Electrical measurements varying the temperature helped to clarify the possible mechanisms of conducting-channel-forming in the films. This work is still ongoing to improve and guarantee the reproducibility, as well as to identify the mechanism responsible for the effect of RS on the PB thin films.

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