"Influência de defeitos de interface nas propriedades elétricas de transistores com camada ativa de ZnO depositada via spray pirólise"

Autores: João. P Braga, Cleber A. Amorim, Giovani Gozzi, Lucas Fugikawa-Santos.

Instituições: Instituto de Biociências, Letras e Ciências Exatas - UNESP - São José do Rio Preto.

Autor apresentador: João Paulo Braga.

Resumo: The effect of intrinsic defects at the semiconductor/insulating interface of spray-coated zinc oxide (ZnO) thin-film transistors (TFTs) has been studied by temperature dependent electrical measurements and the thickness of the silicon dioxide (SiO2) dielectric layer. We show that TFTs with thinner dielectric layer, although presenting higher currents and lower operating voltages, have higher density of defects at the semiconductor/insulating interface. The activation energy of the density of interface defects is the same for all thicknesses of dielectric layer, but the charge carrier mobility activation energy is higher for the thinner dielectric gate. The present study is important to pay attention that the density of states in the gap can be deleterious to the TFT performance.

Link do vídeo: https://www.youtube.com/watch?v=I-jEy0mc8ME&ab_channel=Jo%C3%A3oPauloBraga

Link da sala do Meet: meet.google.com/hyb-mkog-zqc