Primary Researcher

Gwan-Hyoung Lee (이 관 형)

Associate Professor.
Materials Science and Engineering
Yonsei University, Seoul, Korea

E-mail : gwanlee@yonsei.ac.kr
Office : 82-2-2123-7245


Education
B.S.    1995 - 2000    Seoul National University / Materials Science and Engineering
Ph.D.  2000 - 2006   Seoul National University / Materials Science and Engineering

Professional Experience
2002 - 2003      University of Illinois at Urbana-Champaign / Visiting Scholar
2006 - 2008      Samsung Electronics / Senior Engineer
2009 - 2010      Samsung Mobile Display Co. / Senior Engineer
2010 - 2014      Columbia University / Postdoctoral Scientist
2014 - 2016      Yonsei University / Assistant Professor
2016 - Present  Yonsei University / Associate Professor

Honors and Awards
2018     Award for the Excellence in Research in Yonsei University (우수업적교수상 (연구부문))
2017     Award for the Excellence in Research in Yonsei University (우수업적교수상 (연구부문))
2016     Award for the Excellence in Research in Yonsei University (우수업적교수상 (연구부문))
2015     Award for the Best Lecturing Professor in Yonsei University (우수강의교수상) 

Selected Publications
"Epitaxially Self-Assembled Alkane Layers for Graphene Electronics" Advanced Materials (2017)
"Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact Resistance and Threshold Voltage" ACS Nano (2015)
"Multi-Terminal Transport Measurements of MoS2 Using van der Waals Heterostructure Device Platform" Nature Nanotechnology (2015)
"Atomically Thin p-n Junctions with van der Waals Heterointerfaces" Nature Nanotechnology (2014)
"Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures" Advanced Functional Materials (2014)
"Effect of Defects on the Intrinsic Strength and Stiffness of Graphene" Nature Communications (2014)
"Graphene Mechanical Oscillators with Tunable Frequency" Nature Nanotechnology (2013)
"Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures" ACS Nano (2013)
"High Strength Chemical Vapor Deposited Graphene and Grain Boundaries" Science (2013)
"Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide" Nature Materials (2013)
"Controlled Charge Trapping by MoS2 and Graphene in Ultrathin Heterostructured Memory Devices" Nature Communications (2013)
"Tightly Bound Trions in Monolayer MoS2Nature Materials (2013)