Development of visible Light Emitting Diodes (LED) and investigation of their physical characteristics and performance reliability (with Prof. R.Chikovani and V. Zorikov).
Development of advanced dielectric films for Optoelectronic devices, insulators for Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) capacitors (with Prof. Gadi Eisenstein).
Development of a physical parameters extraction methods from Current-Voltage characteristics of semiconductor devices (with Prof. Gadi Eisenstein).
Project “Development of a Light-Emitting Device Based on Gallium Nitride and Investigation of its Electrical and Luminescent Characteristics” by V.Zorikov and V. Mikhelashvili was awarded as the best work on Complex Miniaturization of Radio-Electronic Devices for 1980, USSR.
Nonvolatile memory capacitors based on double Au nanocrystals and HfO2 tunneling and laminate HfNO/HfTiO control high-k insulator layers layers
J. Electroch. Society, Vol. 157, No. 4, pp. H463-469, 2010.
Non-Volatile Low-Voltage Memory Transistors Based on SiO2 Tunneling and HfO2 Blocking Layers with Charge Storage in Au Nanocrystals.
Journal of Applied Physics, 113, 074503 (2013)