and place of birth
17, 1947, Georgia (former USSR)
Department of Electrical Engineering,
Microelectronics Research Center,
Technion, Haifa 32000, Israel
Google Scholar: Vissarion (Beso) Mikhelashvili
ResearchGate: Vissarion (Beso) Mikhelashvili
Areas of research interest
High-K ultra thin dielectric films for VLSI (processing technologies and physics).
Current flow mechanisms in MIS, MIM , MS , PN and PIN structures.
Non-Volatile memory FETs on Silicon used metallic nanoparticles as charge storage sites.
Planar MIS, MISM type photosensors (current and capacitance) sensitive in 220 to 880 nm wavelength range based on SOI.
Blue, green and red light emitting semiconductor diodes (processing, technologies and physics).
Design and technology of multilayer optical stacks (anti reflection coatings, high reflection mirrors, band, short and long pass filters).
Quantum Dash and Quantum Well laser diodes and optical amplifiers (physics and design).
M.Sc. in electronics, Polytechnic Institute, Faculty of Physical
Engineering, Tbilisi, GSSR;
A.F. Ioffe Physico-Technical Institute,
The Optical Communication Laboratory (head Prof. Gadi Eisenstein), Department of Electrical
Engineering, Technion-Israel Institute of Technology.
of Laboratory of Technology and Design of New Optoelectronic Structures and
devices, Research Institute of Microelectronics (MION), Tbilisi, GSSR.
Laboratory of Photoelectric and Luminescent Phenomena in semiconductor
devices, Research Institute of Microelectronics, (MION) Tbilisi, GSSR.
Staff Scientist, Department of Optoelectronics
Institute of Microelectronics (MION), Tbilisi,
Ph.D. student, Member
Research Staff, Department of Microelectronics and Optoelectronics, Institute
of Semiconductors of the Academy of Science of UkSSR, Kiev.
Member Research Staff,
Department of Thin Dielectric films, Research Institute of Microelectronics (MION), Tbilisi, GSSR
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