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Auburn University Physics Department


Group Members


Education: Ph.D., North Carolina State Univ. (1998); M.S., Iowa State Univ. (1994); B.S., Yonsei Univ. (1991).

Present Members

Former Members

Research Highlights

Research Focus: Power Electronics, Photovoltaics, and Biosensing based on Wide Band Gap Semiconductors (GaN/ZnO)

Selected Recent Publications

Resham Thapa, Siddharth Alur, Kyusang Kim, Fei Tong, Yogesh Sharma, Moonil Kim, Claude Ahyi, Jing Dai, Jong Wook Hong, Michael Bozack, John Williams, Ahjeong Son, Amir Dabiran, and Minseo Park, “Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection”, Applied Physics Letters 100, 232109 (2012).

Kyoungsook Park, Abdela Salah Woubit, Cesar D. Fermin, Gopal Reddy, Tsegaye, Habtemariam, Jin Woong Chung, Minseo Park, Dai-Wu Seol, and Moonil Kim, “Hypoxia inhibition of camptothecin-induced apoptosis by Bax loss”, Biologia - Section Cellular and Molecular Biology 67, 616 (2012).

Fei Tong, Kyusang Kim, Daniel Martinez, Resham Thapa, Ayayi Ahyi, John Williams, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, and Minseo Park, “Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array”, Semiconductor Science and Technology 27, 105005 (2012).

Fei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, Ayayi Claude Ahyi, Tamara Issacs-Smith, John Williams, Hosang Ahn, Hyejin Park, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, and Minseo Park, “Growth of ZnO nanorod arrays on flexible substrates: Effect of precursor solution concentration”, Vol 2012. Article ID 651468, ISRN Nanomaterials (2012). doi:10.5402/2012/651468

H. Ahn, H. C. Wikle, S.-B. Kim, D. Liu, S. Lee, M. Park and D.-J. Kim, “Geometric effect of ZnO nanorods on ethanol sensing properties: The relative role of a seed layer,” Journal of the Electrochemical Society 159, Issue 2, E23-E29 (2012).

Hosang Ahn, Yaqi Wang, Seung Hyun Jee, Minseo Park, Young Soo Yoon and Dong-Joo Kim, "Enhanced UV activation of electrochemically doped Ni in ZnO nanorods for room temperature acetone sensing", Chemical Physics Letters 511, 331 (2011). 

Siddharth Alur,  Resham Thapa, Tony Gnaprakasa, Yaqi Wang, Yogesh Sharma*, Edritz Javalosa, Elizabeth Smith, Claude Ahyi, Aleksandr Simonian, Michael Bozack, John Williams and Minseo Park, “DNA hybridization sensor based on AlGaN/GaN HEMT”, Physica Status Solidi C 8, 2483 (2011). 

Dan Liu, Bo Zhou, Sang Hoon Yoon, Howard Clyde Wikle III, Yaqi Wang, Minseo Park, Barton C. Prorok and Dong-Joo Kim, "Effects of the structural layer in MEMS substrates on mechanical and electrical properties of Pb(Zr0.52Ti0.48)O3 films", Ceramics International 37, 2821 (2011). 

Yaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, Fei Tong, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Ginger Wheeler, Mark Johnson, Andrew A. Allerman, Andrew Hanser, Tanya Paskova, Edward A. Preble, and Keith R. Evans, " Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer", Physica Status Solidi C 8, 2430 (2011).

Y. Wang, S. Alur, Y. Sharma, F. Tong, R. Thapa, P. Gartland, T. Issacs-Smith, C. Ahyi, J. Williams, M. Park, M. Johnson, T. Paskova, E. A. Preble and K. R. Evans, “Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate”, Semiconductor Science and Technology 26, 022002 (2011). 

Chiwon Kang, Jung-Hyun Park, Dongna Shen, Hosang Ahn, Minseo, Park and Dong-Joo Kim, "Growth and characterization of (K0.5Na0.5)NbO3 thin films by a sol-gel method", Journal of Sol-Gel Science and Technology 58, 85 (2011). 

Siddharth Alur, Resham Thapa, Tony Gnaprakasa, Yaqi Wang, Yogesh Sharma, Edritz Javalosa, Elizabeth Smith, Claude Ahyi, Aleksandr Simonian, Michael Bozack, John Williams, and Minseo Park, "DNA hybridization sensor based on AlGaN/GaN HEMT", Phys. Status Solidi C, 1–3 (2011) / DOI 10.1002/pssc.201001164

Yaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, An-Jen Cheng, Kilho Kang, Ryan Josefsberg, and Minseo Park, Sharukh Sakhawat, Arindra N. Guha, Okechukwu Akpa, Saritha Akavaram, and Kalyankumar Das, “In-Situ Temperature Measurement of GaN-based Ultraviolet Light Emitting Diodes by Micro-Raman Spectroscopy”, Journal of Electronic Materials, 39, 2448 (2010).

H. Xu, S. Alur, Y. Wang, A.-J. Cheng, K. Kang, Y. Sharma, M. Park, C. Ahyi, J. Williams, C. Gu, A. Hanser, T. Paskova, E. Preble, K. Evans, and Y. Zhou, “In-situ Raman analysis of a bulk GaN-based Schottky rectifier under operation”, Journal of Electronic Materials, 39, 2237 (2010).

R. Nana, P. Gnanachchelvi, M. A. Awaah, M. H. Gowda, A. M. Kamto, Y. Wang, M. Park and K. Das, Phys. “Effect of deep-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes”, Physica Status Solidi A 207, 1489 (2010).

T. Paskova, E. A. Preble, A. D. Hanser, K. R. Evans, R. Kroeger, P. P. Paskov, A. J. Cheng, M. Park, J. A. Grenko, and M. Johnson, “Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics”, Physica Status Solidi C, 6, S344 (2009).

Siddharth Alur, Tony Gnanaprakasa, Hui Xu, Yaqi Wang, Aleksandr L. Simonian, Omar A. Oyarzabal, and Minseo Park, “A Biosensor Based on GaN Field Effect Transistor”, Proceeding, CS MANTECH Conference , Tampa, USA (2009).

Y. Zhou, M. Park, J. Williams, and A. Hanser, “Recent development in the fabrication and electrical performance of bulk GaN-based Schottky diodes”, Book Chapter, Solid State Electronics Research Advances, NOVA Publishers, (2008).

Yi Zhou, Claude Ahyi, Tamara Isaacs-Smith, Michael Bozack, Chin-Che Tin, John Williams, Minseo Park, An-jen Cheng, Jung-Hyun Park, Dong-Joo Kim, Dake Wang, Edward A. Preble, Andrew Hanser, and Keith Evans, “Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate”, Solid State Electronics 52, 756 (2008).

A.-J. Cheng, Y. Tzeng, Y. Zhou, M. Park, T.-h. Wu, C. Shannon, D. Wang, and W. Lee, “Thermal Chemical Vapor Deposition Growth of Zinc Oxide Nanostructures for Dye Sensitized Solar Cell Fabrication”, Appl. Phys. Lett. 92, 1 (2008).

Y. Zhou, D. Wang, C. Ahyi, C.-C. Tin, J. Williams, M. Park, N. M. Williams, A. Hanser, and E. A. Preble, “Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier”, J. Appl. Phys. 101, 024506 (2007).

S. H. Choi, D. Wang, J. R. Williams, M. Park, W. Lu, S. Dhar, and L. C. Feldman, “Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman Spectroscopy”, Applied Surface Science 253, 5411 (2007).

Y. Zhou, C. Ahyi. C.-C. Tin, J. Williams, M. Park, D. Kim, A.-J. Cheng, D. Wang, A. Hanser, E. A. Preble, N. M. Williams, and K. Evans, “Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors”, Appl. Phys. Lett. 90, 121118 (2007).

Y. Zhou, M. Li, D. Wang, C. Ahyi, C.-C. Tin, J. R. Williams, M. Park, N. M. Williams and A. Hanser, “Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery”, Appl. Phys. Lett. 88, 113509 (2006).

D. Wang, M. Park, Y. N. Saripalli, M. A. L. Johnson, C. Zeng, D. W. Barlage, and J. P. Long, “Optical spectroscopic analysis of selected area epitaxially regrown n+ gallium nitride”, J. Appl. Phys. 99, 123106 (2006).

D. Wang, H. W. Seo, C.-C. Tin, M. J. Bozack, J. R. Williams, M. Park, Y. Tzeng, “Lasing in whispering gallery mode in ZnO nanonails”, J. Appl. Phys. 99, 093112 (2006).

Y. Zhou, D. Wang, C. Ahyi, C.-C. Tin, J. Williams, M. Park, N. M. Williams, and A. Hanser, “High breakdown voltage Schottky rectifier fabricated on bulk n- GaN substrate”, Solid-State Electron. 50, 1744 (2006).

D. Wang, C.-C. Tin, J. R. Williams, M. Park, Y. S. Park, C. M. Park, T. W. Kang, and W.-C. Yang, “Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 87, 242105 (2005).

M. Park, J. J. Cuomo, B. J. Rodriguez, W.-C. Yang, R. J. Nemanich, and O. Ambacher, “Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures”, J. Appl. Phys. 93, 9542 (2003).


Photo Gallery

Nano Pictures

HEMT-based DNA Sensor

Research Facilities

Semiconductor Device Fabrication/Testing Facilities 

Optical Characterization Facilities 

Funding Sources

Contact Info

250/251/252 Leach Science Center

334-844-8195 (Graduate Students' Office)
334-844-8169 (Lab)