ISOE2017
International School of Oxide Electronics 2017



April 11-21 2017, Cargèse, Corsica (France)





Welcome to the facinating world of Oxide Electronics! Initiated by the pioneering discovery of high TC superconductors and boosted by the progress in thin film deposition techniques, the field of Oxide Electronics is now growing exponentially.

Major breakthroughs over the last 10 years include the advent of multiferroics and the discovery of several unexpected phases at oxide interfaces, epitomized by the high-mobility two-dimensional electron gas found at the interface between band insulators. Novel physical phenomena have been revealed in ultrathin films of ferroelectric or correlated electron systems. Giant responses and phase transitions induced by light or electric field offer potential for innovative devices.

After ISOE2011, ISOE2013 and ISOE2015, the 4th Edition of the International School of Oxide Electronics aims at gathering PhD students, post-docs, young scientists and senior researchers working in Oxide Electronics for almost two weeks in the peaceful and scenic Cargèse Scientific Institute, to build up the future Oxide Electronics scientific community.

Fundamental notions of solid-state physics (superconductivity, ferroelectricity, magnetism, first-principles calculations, optics, correlations, etc) will be developped. The school will also give an extended overview of the field, covering topics such as key advanced characterization and computational techniques, as well as multiferroics, oxide interfaces, domain walls or topogically insulating oxides. Oxide-based devices for electronics, spintronics, optics and other fields will also be presented in details.