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Dr. Quazi Deen Mohd Khosru

Professor, Electrical and Electronic Engineering 

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Office : Room No:325
             Department of Electrical and Electronic Engineering
             ECE Building ,West Palashi
             Bangladesh University of Engineering &Technology

Phone : (880 2) 9665650-6152

Email:   qdmkhosru@eee.buet.ac.bd

Education: B.Sc. in EEE
                   Aligarh Muslim University Aligarh, India,1986 

                   M.S. in EEE
                   Bangladesh University of Engineering and Tech.,1989

                   Ph.D. in EE
                   Osaka University, Osaka, Japan,1994

Research Interest:    
Nanodevice Reliability, Quantum Mechanical Modeling, Reliability of high-κ Dielectrics,  Physics, Modeling and Characterization of Novel Nanoscale MOS Devices, 2-D Material Transistor, Junctionless Transistor.


Recent Announcements

  • Paper Accepted in SSE Kanak Datta, Quazi D. M. Khosru, “III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond,” Solid State Electronics, Elsevier (Accepted)
    Posted Dec 9, 2015, 5:43 PM by Khosru Quazi
  • Paper Published in ECS Transactions Saeed Uz Zaman Khan and Quazi D. M. Khosru published paper “Quantum Mechanical Electrostatics and Transport Simulation and Performance Evaluation of Short Channel Monolayer WSe2 Field Effect Transistor” in ECS Transactions (Issue-14 and Volume-66). 
    Posted Nov 19, 2015, 3:09 PM by Khosru Quazi
  • Paper Published in International Journal of Numerical Modeling Saeed Uz Zaman Khan, Md. Shafayat Hossain, Fahim Ur Rahman, Rifat Zaman, Md. Obaidul Hossen, Quazi D. M. Khosru published paper “Impact of High-κ Gate Dielectric and Other Physical Parameters on the Electrostatics and Threshold Voltage of Gate-All-Around Nanowire Transistor”  in issue-4 volume-28 of International Journal of Numerical Modeling: Electronic Networks, Devices and Fields (IJNM). 
    Posted Nov 19, 2015, 3:10 PM by Khosru Quazi
  • Md. Hasibul Alam and Dr. Khosru won IEEE Best Paper Award for ICECE 2014 Md. Hasibul Alam and Dr. Quazi Deen Mohd Khosru received IEEE Bangladesh Section Best Paper Award at ICECE 2014 for their paper "Effect of Biaxial Strain on Structural and Electronic Properties of Graphene / Boron Nitride Hetero Bi-layer Structure". Out of 213 papers from 26 different countries, this paper secured the first position. Md. Hasibul Alam, former M.Sc. student of Dr. Khosru presented the paper at ICECE 2014 in the session "2D and Emerging Materials", chaired by Dr. M. Saif Islam of UC Davis, USA.
    Posted Jan 4, 2015, 2:37 PM by Khosru Quazi
Showing posts 1 - 4 of 4. View more »
Aggressive scaling of Si devices to comply with Moore's law has reached a bottleneck. Researchers are investigating novel technologies, materials and devices structures to continue scaling according to Moore's law for sub 10 nm technology nodes. Nano device research group explores the inherent physics and performance factors of potential candidates of post-CMOS era. Researchers in this group have been involved in quantum mechanical and physically based simulation of novel devices like FinFET, TFET, NWFET, GAAFET and FlexFETs and novel materials like III-V compound semiconductors and nanowires. 

Interested and highly motivated Undergraduate and postgraduate students can contact me at qdmkhosru@eee.buet.ac.bd with a brief letter of motivation and resume.
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