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Jingchun Zhang  
Alumnus - Ph.D. Student

Ph.D. in Chemical Engineering, University of California, Berkeley (2007)
M.S. in Material Science, Tsinghua University, China (2002)
B.S. in Polymer Material & Chemical Engineering, Tsinghua University, China (2000)


jingchunz (at)

Current Position:

Applied Materials

Silicon Carbide and Diamond Materials Development for Micro- and Nano-electromechanical Systems
Silicon carbide is well known as an attractive material for MEMS applications at high temperatures and in harsh environments. Our group has developed a single-precursor low-pressure chemical vapor deposition (LPCVD) process to grow conformal poly-SiC films on different substrates at deposition temperatures from 650°C to 850°C.

To further extend our understanding and application of the SiC films grown by our single-precursor low pressure process, I am conducting research on following fields:
1. Electrical characterization of SiC.
2. P-type doping of SiC during film growth in the LPCVD reactor.
3. Metalization of SiC film and metal/SiC contact/interface properties characterization.

Ph.D. Thesis: Silicon carbide and diamond materials development for micro- and nano-electromechanical systems (2007)
Advisors: Prof.'s Roya Maboudian and Roger T. Howe.