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Journal of New Technology and Materials (JNTM), Vol. 01, N°00 (2011)

Special issue of NMCA’2011

Study of the performance of ballistic carbone nanotube FETs

Dj. Rechem, S. Benkara, K. Lamamra

Sciences and technology department, Sciences and the technologies faculty, Larbi Ben M’hidi University, Oum El Bouaghi, Algers, E-mail: Rechem_dj@yahoo.fr

Received: 23 May 2011, accepted: 30 September 2011

Abstract

Using a two-dimensional (2-D) simulation, we study the impact of varying the nanotube diameter and gate oxide thickness on the performance of a ballistic nanoscale carbon nanotube field effect transistor (CNTFET). Our results show that the nanotube diameter influences the I_ON/I_OFF current ratio; the drain induced barrier lowering (DIBL), the subthreshold slop as well as transconductance and drain conductance. We also show that these device characteristics are affected by the gate oxide thickness. Thus, nanotube diameter and gate oxide thickness must be carefully taken into account when designing robust logic circuits based on CNTFETs with potentially high parameter variability.

Keywords: Carbon nanotube; Field- effect transistor; Ballistic; Carbon nanotube diameter; Gate oxide thickness.