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Journal of New Technology and Materials (JNTM), Vol. 01, N°00 (2011)
Special issue of NMCA’2011
Realization and study of ZnO thin films intended for optoelectronic applications
L. Herissi(1)*, L. Hadjeris(1), H. Moualkia(1), N. Abdelmalek(1), A. Hafdallah(2), N Attaf(2) and M. S. Aida(2)
1 LMSSEF, Université d’Oum El Bouaghi, 04000. Algérie
2 LCMI, Université Mentouri, Constantine, 25000, Algérie
Corresponding author: Tel: +213773595986 Fax: +21332412419 Email: hlabidi12@gmail.com
Received: 23 May 2011, accepted: 30 September 2011
Abstract :
The objective of this study is the realization of zinc oxide (ZnO) thin films intended for optoelectronic applications. For this purpose, thin films were prepared by spray pyrolysis technique from zinc acetate solutions of different molarities (0.025 M, 0.05 M and 0.1 M) used as precursors on Si and glass substrates heated between 200 and 500 °C. The nozzle to substrate distance was varied between 20 and 30 cm. Structural, optical and electrical properties of the films have been studied. The results indicated that the films deposited were transparent in the visible region, well adherent to the substrates and presented surface roughness. All samples were polycrystalline in nature, having hexagonal würtzite type crystal structure. A (002) preferred orientation was observed at 450°C and a 0.025M molarity. The optical energy gap measured was about 3.3 eV. The refractive index values presented small variations with the deposition conditions and were located between 1.8 and 2.0. The electrical properties showed that the samples are natively n‑type semiconductor and the electrical conductivity at room temperature varied between 10-5 and 102 (Ω.cm)‑1.
Key-words : thin films, semiconductor, band-gap, refractive index, electrical conductivity, optoelectronic.