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Journal of New Technology and Materials (JNTM), Vol. 01, N°00 (2011)

Special issue of NMCA’2011

Numerical analysis of GaAs MESFETs OPFET

I. Hamma^a, Y. Saidi^b, M. Zaabat^a and C. Azizi^a

^aLaboratoire Composants Actifs et Matériaux, Univesité dOum El Bouaghi, Algérie

^bDepartment of physics, Univesity Mentouri of Constantine, Algeria

Received: 23 May 2011, accepted: 30 September 2011

Abstract

A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor) doped uniformly .the model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky . the 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.

Keywords: 2-D modeling potential distribution, Photodetector, Photovoltage