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Journal of New Technology and Materials (JNTM), Vol. 01, N°00 (2011)

Special issue of NMCA’2011

Spin polarized transport in semiconductor

A. Boudine^a, K. Benhizia^b and L. Kalla^a

^aUniversité Larbi ben M’Hidi, 04000-Oum El Bouaghi, Algérie

^bUniversité Mentouri, Route Ain El Bey, Constantine 25017, Algérie

Received: 23 May 2011, accepted: 30 September 2011

Abstract

In this paper, we study two-dimensional spin polarized transport in semiconductors. Based on the some semiclassical considerations and taking account of the spin relaxation. We determined the relationship of the polarization as a function of time and the distance. And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport.

This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.

Keywords: Spin polarized transport, spintronic, spinfet, Semiconducteur