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Elaboration and characterization of zinc oxide varistors

A. Bouchekhlal ^a, Y. Beggah ^b, M.S. Aida^b

^aMaterials Research Laboratory, Faculty of Engineering Science, Physics Department. University of Jijel, 1800 Algeria.

^bLaboratory for Thin Film and Interface, Science Faculty, Department of Physics, University of Constantine Mantouri, 2500 Algeria. E-mail : ahmed_electronique81@yahoo.fr

Received: 23 May 2011, accepted: 30 September 2011

Abstract

ZnO-based varistors were fabricated by sintering zinc oxide micro crystals with several additives of metal Oxides. The effect of sintering temperature on varistor properties of (Bi, Co, Cr, Mn, Sb, Al)-doped ZnO ceramics was investigated in the range of 1280–1350 °C. The average grain size increased to 5.13 to 7.88 µm with the increase of sintering temperature. However, the nonlinear coefficient of this system was nearly constant in the range of sintering temperature. The highest breakdown voltage was 1143.4 v / cm for the varistor sintered at 1350 °C the sample C sintered exhibited the best electrical properties.

Keywords: ZnO; Microstructure; Electrical properties; Varistors