International School of Oxide Electronics 2015
co-organized by CNRS and COST Action MP1308 "TO-BE"


12-24 October 2015, Cargèse, Corsica (France)



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Initiated by the progress in thin film growth since the discovery of high TC superconductors, the field of Oxide Electronics took off at the end of the 1990’s and is now growing at an exponential pace.

Major breakthroughs over the last 7 or 8 years include the advent of multiferroics and the discovery of several unexpected phases at oxide interfaces, epitomized by the high-mobility two-dimensional electron gas found at the interface between two band insulators, LaAlO3 and SrTiO3. Novel physical phenomena have also been revealed in ultrathin films of ferroelectric or correlated electron systems, as well as giant responses and phase transitions induced by light or electric field, with potential for innovative devices.

After ISOE2011 and ISOE2013, the 3rd Edition of the International School of Oxide Electronics aims at gathering PhD students, post-docs, young scientists and senior researchers working in Oxide Electronics for almost two weeks in the peaceful and scenic Cargèse Scientific Institute, to build up the future Oxide Electronics scientific community.

Basic notions of solid-state physics (superconductivity, ferroelectricity, magnetism, optics, correlations, etc) will be recalled, but the school will also give an extended overview of the field, covering topics such as multiferroics, oxide interfaces, domain walls or topogically insulating oxides. Oxide-based devices for electronics, spintronics, optics and other fields will also be presented in detail, as well as key advanced characterization and computational techniques.