- The study of the principles and use of computers
- the branch of engineering science that studies (with the aid of computers)
computable processes and structures
- Computer science or computing science (sometimes abbreviated CS) is the
study of the theoretical foundations of information and computation, and of
practical techniques for their implementation and application in computer
- As supported by multiple references, cited below, there are three known
categorical definitions for the term Information technology (IT).
- Things needed for an activity
- The matter from which a thing is or can be made
- the tangible substance that goes into the makeup of a physical object; "coal
is a hard black material"; "wheat is the stuff they use to make
- derived from or composed of matter; "the material universe"
- concerned with worldly rather than spiritual interests; "material
possessions"; "material wealth"; "material comforts"
- A person of a specified quality or suitability
- applying the mind to learning and understanding a subject (especially by
reading); "mastering a second language requires a lot of work"; "no schools
offer graduate study in interior design"
- The devotion of time and attention to acquiring knowledge on an academic
subject, esp. by means of books
- Activity of this type as pursued by one person
- An academic book or article on a particular topic
- analyze: consider in detail and subject to an analysis in order to discover
essential features or meaning; "analyze a sonnet by Shakespeare"; "analyze the
evidence in a criminal trial"; "analyze your real motives"
- survey: a detailed critical inspection
- a computer circuit with several inputs but only one output that can be
activated by particular combinations of inputs
- a movable barrier in a fence or wall
- supply with a gate; "The house was gated"
- A hinged barrier used to close an opening in a wall, fence, or
- A gateway
- A means of entrance or exit
gate study material for computer
science - Gate Stack
Gate Stack and Silicide Issues in Silicon: Volume 670 (MRS
As technologists consider scaling
microelectronic devices below the 100nm node, it is clear that many new
materials will be introduced into the fab line. Determining the best materials
and the best processing techniques are extremely challenging tasks. Much of this
book attempts to find a replacement for silicon dioxide. Hafnium dioxide,
zirconium dioxide, and their silicates and aluminates are the subjects of
intense scrutiny, but other materials are being considered as well. Obtaining a
suitable large capacitance, while simultaneously obtaining low charge density in
the film, and finding a material that has adequate thermal stability is proving
difficult. Real-time electron microscopy of metal-silicon reactions is providing
valuable new insights. Topics include: high-K materials; processing of high-K
gate dielectrics; gate stack and silicide issues in Si processing; electrical
performance of novel gate dielectrics; novel gate structures; novel silicide
processes; and shallow junctions and integration issues in FEOL.
getting start with materials for watercolor
painting, this picture is the basic materials of watercolor painting;
watercolor, brushes, paper, mixing palette, water container, board, gummed brown
paper tape, sponge.
I can't walk past a material shop.....
gate study material for computer
As the feature size of microelectronic devices
approaches the deep submicron regime, the process development and integration
issues related to gate stack and silicide processing are key challenges. Gate
leakage is rising due to direct tunneling. Power and reliability concerns are
expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm.
Gate insulators must not deleteriously affect the interface quality, thermal
stability, charge trapping, or process integration. Metal gate materials and
damascene gates are being investigated, in conjunction with the application of a
high-permittivity gate insulator, to provide sufficient device performance at
ULSI dimensions. The silicidation process is also coming under pressure. Narrow
device widths and decreasing junction depths are making the formation of
low-leakage, low-resistance silicide straps extremely difficult. Producing
shallower junctions via ion implantation is inhibited by transient enhanced
diffusion and low beam currents at low implantation energies. Gate stack and
contact film effects, such as point defect injection, extended defect formation,
and stress on ultrashallow junction formation must be considered.