Gate Study Material For Computer Science

    computer science
  • The study of the principles and use of computers
  • the branch of engineering science that studies (with the aid of computers) computable processes and structures
  • Computer science or computing science (sometimes abbreviated CS) is the study of the theoretical foundations of information and computation, and of practical techniques for their implementation and application in computer systems.
  • As supported by multiple references, cited below, there are three known categorical definitions for the term Information technology (IT).
  • Things needed for an activity
  • The matter from which a thing is or can be made
  • the tangible substance that goes into the makeup of a physical object; "coal is a hard black material"; "wheat is the stuff they use to make bread"
  • derived from or composed of matter; "the material universe"
  • concerned with worldly rather than spiritual interests; "material possessions"; "material wealth"; "material comforts"
  • A person of a specified quality or suitability
  • applying the mind to learning and understanding a subject (especially by reading); "mastering a second language requires a lot of work"; "no schools offer graduate study in interior design"
  • The devotion of time and attention to acquiring knowledge on an academic subject, esp. by means of books
  • Activity of this type as pursued by one person
  • An academic book or article on a particular topic
  • analyze: consider in detail and subject to an analysis in order to discover essential features or meaning; "analyze a sonnet by Shakespeare"; "analyze the evidence in a criminal trial"; "analyze your real motives"
  • survey: a detailed critical inspection
  • a computer circuit with several inputs but only one output that can be activated by particular combinations of inputs
  • a movable barrier in a fence or wall
  • supply with a gate; "The house was gated"
  • A hinged barrier used to close an opening in a wall, fence, or hedge
  • A gateway
  • A means of entrance or exit
gate study material for computer science
gate study material for computer science - Gate Stack
Gate Stack and Silicide Issues in Silicon: Volume 670 (MRS Proceedings)
Gate Stack and Silicide Issues in Silicon: Volume 670 (MRS Proceedings)
As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.

getting start with materials for watercolor painting, this picture is the basic materials of watercolor painting; watercolor, brushes, paper, mixing palette, water container, board, gummed brown paper tape, sponge.
I can't walk past a material shop.....
gate study material for computer science
gate study material for computer science
Gate Stack and Silicide Issues in Silicon Processing: Volume 611 (MRS Proceedings)
As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.