INTERNATIONAL JOURNALS

 

  •  E. Verrelli, I. Anastasiadis, D. Tsoukalas, M. Kokkoris, R. Vlastou, P. Dimitrakis, P. Normand Proton radiation tolerance of nanocrystal memories,  Physica E, 38, 67 (2007).
  •  E. Verrelli, D. Tsoukalas, K. Giannakopoulos, D. Kouvatsos, P. Normand, D. E. Ioannou Nickel nanoparticle deposition at room temperature for memory applications, Microelectronic Eng. 84, 1994 (2007).
  •   E. Verrelli, D.Tsoukalas, M.Kokkoris, R.Vlastou, P.Dimitrakis and P.Normand Proton Radiation Effects on Nanocrystal Non-Volatile Memories, In Press IEEE Trans. Nucl. Sc. 2007.
  •  V. Tsouti, G. Bikakis, S. Chatzandroulis, D. Goustouridis, P. Normand and D. Tsoukalas, Impact of structural parameters on the performance of silicon micromachined capacitive pressure sensors, Sensors and Actuators A: PhysicalVolume 137, 20-24 (2007)
  •   P. Tsouroutas, D. Tsoukalas, A. Florakis, et al. Laser annealing for n(+)/p junction formation in germanium Mat Sci Semicon Proc 9 (4-5): 644-649 (2006)
  •   A. Florakis, D. Tsoukalas, I. Zergioti et al. Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon, Nucl Instrum Meth B 253 (2006)
  •   S. Chatzandroulis, S. Kolliopoulou, D. Goustouridis, D. Tsoukalas, Capacitive pressure sensors and switches fabricated using strain compensated SiGeB, Microelectronic Eng 83 (4-9): 1209-1211 (2006)
  •   S. Kolliopoulou, P. Dimitrakis, D. Goustouridis, P. Normand, C. Pearson, M.C. Petty, H. Radamson, D. Tsoukalas, Metal nano-floating gate memory devices fabricated at low temperature, Microelectronic Eng 83 (4-9): 1563-1566 (2006)  

    • D. Tsoukalas, P. Dimitrakis, S. Kolliopoulou and P. Normand Recent advances in nanoparticle memories Materials Science and Engineering: B, Volumes124-125, 5 December 2005, Pages 93-101 
    •  D. Skarlatos, C. Tsamis, M. Perego, M. Fanciulli and D. Tsoukalas Interstitial injection during oxidation of very low energy nitrogen-implanted silicon Materials Science and Engineering: B, Volumes 124-125, 5 December 2005,Pages314-318 
    •  Kanjilal A, Hansen JL, Gaiduk P, et al. Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing APPL PHYS A-MATER 81 (2): 363-366 JUL 2005
    • Koliopoulou S, Dimitrakis P, Goustouridis D, et al. A Si/SiGe MOSFET utilizing low-temperature wafer bonding MICROELECTRON ENG 78-79: 244-247 Sp. Iss. SI MAR 2005
    • Chatzandroulis S, Tegou E, Goustouridis D, et al. Capacitive-type chemical sensors using thin silicon/polymer bimorph membranes SENSOR ACTUAT B-CHEM 103 (1-2): 392-396 SEP 29 2004
    • Dimitrakis P, Kapetanakis E, Tsoukalas D, et al. Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis SOLID STATE ELECTRON 48 (9): 1511-1517 SEP 2004
    • Kolliopoulou S, Dimitrakis P, Normand P, et al. Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells MICROELECTRON ENG 73-4: 725-729 Sp. Iss. SI JUN 2004
    • Normand P, Dimitrakis P, Kapetanakis E, et al. Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications MICROELECTRON ENG 73-4: 730-735 Sp. Iss. SI JUN 2004
    • Chatzandroulis S, Tegou E, Goustouridis D, et al. Fabrication of chemical sensors based on Si/polymer bimorphs MICROELECTRON ENG 73-4: 847-851 Sp. Iss. SI JUN 2004
    • Skarlatos D, Kapetanakis E, Normand P, et al. Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N-2(+) implantation J APPL PHYS 96 (1): 300-309 JUL 1 2004
    • Skarlatos D, Perego M, Tsamis C, et al. Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon NUCL INSTRUM METH B 216: 75-79 FEB 2004
    • Normand P, Kapetanakis E, Dimitrakis P, et al. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications NUCL INSTRUM METH B 216: 228-238 FEB 2004 
    •  Goustouridis D, Minoglou K, Kolliopoulou S, et al. Low temperature wafer bonding for thin silicon film transfer SENSOR ACTUAT A-PHYS 110 (1-3): 401-406 FEB 1 2004  
    • Kolliopoulou S, Dimitrakis P, Normand P, et al. Hybrid silicon-organic nanoparticle memory device’, J APPL PHYS 94 (8): 5234-5239 OCT 15 2003 
    • Normand P, Kapetanakis E, Dimitrakis P, et al., ‘Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis’, APPL PHYS LETT 83 (1): 168-170 JUL 7 2003  
    • Kapetanakis E, Skarlatos D, Tsamis C, et al ‚Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates APPL PHYS LETT 82 (26): 4764-4766 JUN 30 2003  
    • Paul S, Pearson C, Molloy A, et al. ‘Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structuresNANO LETT 3 (4): 533-536 APR 2003  
    • Skarlatos D, Tsamis C, Tsoukalas D, ‘Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate’, J APPL PHYS 93 (3): 1832-1838 FEB 1 2003  
    • Polymenakos S, Stergiou VC, Kontos AG,  C. Tsamis, Y. Raptis, D. Tsoukalas ‘Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructures’, J. Micromech. And Microeng. 12 (4): 450 (2002) 
    • E. Kapetanakis, P. Normand, D. Tsoukalas and K. Beltsios ‘Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides’ Microelectronic Engineering, Volumes 61-62, July 2002, Pages 505-510  
    • Kapetanakis E, Normand P, Tsoukalas D, et al. ‘Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis, Appl. Phys. Lett. 80 (15): 2794-2796 (2002) 
    • S. Chatzandroulis, A. Tserepi, D. Goustouridis, P. Normand and D. Tsoukalas ‘Fabrication of single crystal Si cantilevers using a dry release process and application in a capacitive-type humidity sensor’, Microelectronic Engineering, 61-62, July 2002, Pages 955-961  
    • P Normand , K. Beltsios K, A. Tserepi K, Aidinis , D. Tsoukalas, C. Cardinaud ‘ A masking approach for anisotropic silicon wet etching ‘Electrochem. And Solid State Lett.  4: G73 (2001) 
    • P. Normand, E. Kapetanakis, D. Tsoukalas, A. Tserepi, E. Tsoi, K. Beltsios, K. Aidinis, S. Zhang and J. van den Berg ‘Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques’, Microelectronic Engineering, 57-58, 1003, (2001)  
    • D. Tsoukalas, D. Skarlatos and J. Stoemenos ‘Investigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon’, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 178, 80, (2001)  
    • Normand P, Kapetanakis E, Tsoukalas D, et al.,’ MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation’, Mat Sc. Eng C-Bio S 15 (1-2): 145-147, Augt 20 2001 
    • D. Tsoukalas, C. Tsamis, P. Normand ‘Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material’, Journal of Applied Physics, 89, 7809 (2001) 
    • S. Hatzandroulis, D. Tsoukalas ‘Capacitance to frequency converter suitable for sensor applications using telemetry’in Analog Integrated circuits and Signal Processing, 27, 31 (2001) 
    • P. Normand, K. Beltsios, E. Kapatanakis, D. Tsoukalas, T. Travlos, J. Van den Berg, S. Zhang, J. Gautier, L. Palun ‘Formation of two dimensional arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low energy Si or Ge ion implantation in silicon oxide films’ in Nucl. Instr. and Methods B 178, 74 (2001)
    • F. Cristiano, B. Colombeau, B. de Mauduit, M. Omri, A. Claverie, F. Giles, D. Skarlatos, D. Tsoukalas ‘Influence of annealing ambients on relative stabilities of dilocation loops in silicon’ in Nucl. Instrum. αnd Methods B, 178, 84 (2001) 
    • E. Kapetanakis, P. Normand, D. Tsoukalas et al. ‘Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy implantation and annealing’, Applied Physics Letters 77, 3450 (2000) 
    •  D. Tsoukalas, D. Skarlatos, J. Stoemenos ‘Investigation of the interaction between interstitials and dislocation loops using the wafer bonding technique’, J. Appl. Phys. 87, 8380-84 (2000) 
    • D. Skarlatos, D. Tsoukalas, L. F. Giles and A. Claverie ‘Point defect injection during nitrous oxidation of silicon’, J. Appl. Phys. 87, 1103-1109 (2000) 
    • S. Chatzandroulis, D. Tsoukalas, P. NeukommA miniature pressure system with a capacitive sensor and a passive telemetry link for use in implantable applications’ IEEE J. of  Microelectromechanical Systems 9, 18-23 (2000) 
    • D. Skarlatos, M. Omri, A. Claverie, D. Tsoukalas 'Estimation of the number of interstitial atoms injected in silicon during thin oxide formation', J. of The Electrochemical Soc. 146, 2276-2283 (1999) 
    • D. Goustouridis, D. Tsoukalas, P. Normand, A. Kontos, Y. Raptis, E. Anastassakis 'Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wfer bonding' Sensors & Actuators 76 403-408, (1999) 
    • L. F. Giles, M. Omri, B. de Mauduit, A. Claverie, D. Skarlatos, D. Tsoukalas 'Coarsening of End-of-Range defects in ion implanted silicon annealed in neutral and oxidizing ambients', Nucl. Instr. and Method. in Phys. Research B148, 273-278 (1999)
    • C. Tsamis and D. Tsoukalas 'Model for the recombination of silicon interstitials at non oxidizing interfaces',  J. Appl. Phys.84, 6650 (1998) 
    •  Goustouridis, P. Normand and D. Tsoukalas ‘Ultraminiature capacitive pressure sensing elements obtained with fusion bonding’ Sensors & Actuators A 68, 269 (1998)
    • P. Dimitrakis, S. Hatzandroulis, D. Tsoukalas, J. Stoimenos and G. Papaioannou ‘Electrical characterization of silicon wafer bonding structures’ Solid-State Electronics 42, 201 (1998)
    •   D. Tsoukalas, P. Normand, C. Aidinis, E. Kapetanakis and P. Argitis ‘Fabrication of Si nanodevices by optical lithography and anisotropic etching’ Microelectronic Engineering 41/42, 523 (1998) 
    •  P. Normand, D. Tsoukalas, E. Kapetanakis. J. A. Van Den Berg, G. A. Armour and J. Stoemenos' Formation of 2-D arrays of Silicon nanocrystals in thin SiO2 films by very-low energy Si ion implantation' Electrochemical and Solid-State Letters, 1, 88 (1998) 
    •  D. Goustouridis, P. Normand and D. Tsoukalas ‘Miniaturization of Si diaphragms obtained by wafer bonding’ Microelectronic Engineering 41/42, 437 (1998) 
    •  P. Normand, D. Tsoukalas, C. Aidinis, A. Tserepi, D. Kouvatsos and E. Kapetanakis ‘Fabrication of Si nanowires using anisotrpic dry and wet etching’, Microelectronic Engineering 41/42, 551 (1998) 
    • S. Chatzandroulis, D. Goustouridis, P. Normand and D. Tsoukalas ‘A solid-state pressure sensing microsystem for biomedical applications’, Sensors & Actuators A 62,  551, (1997) 
    • P. Normand, D. Tsoukalas, E. Kapetanakis. J. A. Van Den Berg, G. A. Armour and J. Stoemenos ‘Silicon nanocrystal formation in thin oxides by very-low-energy silicon implantation’, Microelectronic Engineering 36, 79 (1997) 
    • D. Tsoukalas, C. Tsamis, D. Kouvatsos, P. Revva and E. Tsoi ‘Reduction of the Reverse Short Channel Effect in thick SOI MOSFETs’,  IEEE Electrοn Device Lett. 18, 90 (1997)  
    • C. Tsamis, D. Kouvatsos and D. Tsoukalas ‘Influence of N2O silicon oxidation on point defect injection kinetics in the high temperature regime’, Appl. Phys. Lett. 69, 2725 (1996) 
    • D. Tsoukalas, D. Kouvatsos 'Silicon interstitial trapping in polycrystalline silicon films', Appl. Phys. Lett. 68, 1549 (1996)  
    • D. Kouvatsos, D. Tsoukalas, E. Sarcona, M. Hatalis and J. Stoemenos 'A single crystal silicon thin film transistors fabricated at low process temperature on glass substrate', Electronics Letters 32, 775 (1996) 
    • D. Goustouridis, S. Chatzandroulis, P. Normand and D. Tsoukalas 'A miniature self-aligned pressure element', Journal of Micromechanics and Microengineering 6, 33 (1996) 
    • D. Tsoukalas, P. Dimitrakis, G. Papaioannou and J. Stoemenos 'Electrical and Structural characterization of wafer bonded non-annealed SIMOX', Microelectronic Engineering 28, 471 (1995) 
    • C. Tsamis, D. Tsoukalas and P. Normand 'Decrease of the lateral distribution of interstitials in silicon-on-insulator', Microelectronic Engineering 28, 463 (1995) 
    • D. Tsoukalas and C. Tsamis 'Investigation of the silicon interstitials distribution in silicon and silicon-on-insulator', Appl. Phys. Lett. 66, 971 (1995) 
    • D. Tsoukalas, C. Tsamis and J. Stoemenos 'Investigation of silicon interstitial reactions with insulating films', Appl. Phys. Lett. 63, 3169 (1993) 
    • C. Tsamis, D. Tsoukalas and N. Guillemot 'Silicon interstitial reactions with thermally grown silicon dioxide', Microelec.Engineering 22, 363 (1993) 
    • C. Tsamis, D. Tsoukalas and J. Stoemenos 'Comparison of the growth and shrinkage of Oxidation Stascking Faults in silicon and silicon-on-insulator', J. Appl. Phys. 73, 3246 (1993) 
    • J. Boussey-Said, N. Guillemot, J. Stoemenos and D. Tsoukalas 'Oxidation Stacking faults in silicon-on-insulator structures obtained with the wafer-bonding', J. Electrochem. Soc. 140, 544 (1993) 
    • N. Glezos, J. Raptis, D. Tsoukalas and M. Hatzakis 'Application of a new analytical technique of electron distribution calculations to the profile simulation of a high sensitivity negative e-beam resist', J. Vac. Sci. and Technol. B10(6), 2606 (1992) 
    • N. Guillemot, D. Tsoukalas, C. Tsamis, J. Margail and J. Stoemenos 'Supression mechanisms for oxidation stacking faults in Silicon-On-Insulator', J. Appl. Phys. 71, 1713 (1992) 
    • N. Guillemot, D. Tsoukalas, C. Tsamis, J. Margail, A.M.Papon and J.Stoemenos 'Suppression of oxidation stacking faults in silicon seperation by oxygen', Mater. Sci. Engin. B12, 47 (1992) 
    • D. Tsoukalas, C. Tsamis, N. Guillemot, J. Stoemenos and J. Margail 'Study of the growth kinetics of oxidation-induced stacking faults in separation by implanted oxygen structures using a new chemical etching process', Mater. Sci. Engin. B12, 209 (1992) 
    • C. Tsamis, D. Tsoukalas, N. Guillemot, J. Stoemenos and J. Margail ‘Characterization of oxidation-induced stacking faults in SOI structures formed by a new chemical etching process', Semicond. Sci. Technol. 7, A193 (1992) 
    • C. Tsamis, D. Tsoukalas, N. Guillemot, J. Stoemenos and J. Margail 'A new chemical etching for the delineation of Oxidation Stacking faults in Silicon-On-Insulator', J. Electrochem. Soc.38, 2752 (1991)  
    • D. Tsoukalas 'Transient boron diffusion in silicon under oxidizing ambient and extrinsic conditions. Influence of point defect recombination', J. Appl. Phys. 70, 7309 (1991) 
    • D. Tsoukalas 'Range of high energy phosphorus and medium energy boron ions implanted in polymers', Solid-St.Electronics 33, 639 (1990) 
    • P. Normand, D. Tsoukalas, N. Guillemot and J. Stoemenos 'Boron diffusion in Silicon-On-Insulator formed by Oxygen implantation', J. Electrochem. Soc. 137, 2306 (1990) 
    • P. Normand, D. Tsoukalas, N. Guillemot and P. Chenevier 'A pile-up phenomenon during arsenic diffusion in Silicon-On-Insulator formed by Oxygen implantation', J. Appl. Phys. 66, 3585 (1989) 
    • D. Tsoukalas and P. Chenevier ' A model for the oxidartion-enhanced diffusion of boron in extrinsic silicon', J. Appl. Phys. 66, 1858 (1989) 
    • N. Guillemot, P. Normand, D. Tsoukalas and P. Chenevier 'Diffusion de l'arsenic dans les structures silicium-sur-isolant obtenues par implantation d'oxygene', Revue de Phys. Appl. 23, 1369 (1988) 
    • D. Tsoukalas and P. Chenevier 'Boron diffusion in silicon in inert and oxidizing ambient and extrinsic conditions', Phys. St. Sol. (a), 100, 461 (1987) 
    • L. Bouro and D. Tsoukalas 'Determination of doping and mobility profiles by automatic electrical measurements and anodic stripping', J. Phys.E : Scientific. Instruments 20, 541 (1987) 
    • D. Tsoukalas and P. Chenevier 'Boron diffusion in silicon by a vacancy mechanism', Phys. St. Sol. (a), 92, 495 (1985)

     

    ENCYCLOPEDIA PAPERS

    [1] E. Kapetanakis, P. Normand, K. Beltsios, D. Tsoukalas, Nanocrystal memories in: H. S. Nalwa (Ed.), Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, USA, Vol.6, pp. 321-340, 2003.

     

    [2] D. Tsoukalas, S. Chatzandroulis, D. Goustouridis Capacitive Microsensors, In Encyclopedia of Medical Devices John Wiley, Feb. 2006