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Publications in Electronics and Optoelectronics

[HTML] Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

W de Boer, C McGonigle, T Gregorkiewicz… - Scientific reports, 2014 - nature.com
(a) PL spectra of GaN:Eu and Y 2 O 3 :Eu at room temperature under pulsed excitation, with the
peaks labeled according to convention 9 and consistent with measurements by Tallant et al.
21 . The insets show the respective excitation paths: the Eu 3+ -ions in GaN are excited ...
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Gold-active-layer Transistor Circuits

J Bastos, P Stallinga - Journal of Active & Passive Electronic …, 2014 - oldcitypublishing.com
Gold-active-layer transistors have been recently reported in the literature. The device
terminal characteristics show a power-law dependence of the drain current with the gate
overdrive voltage. A study of the theoretical transition frequency shows that circuits ...
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Electrical characterization of organic (amorphous) electronic materials

P Stallinga - physica status solidi (c), 2014 - Wiley Online Library
... 2. They are basically the following 2.1 Temperature-dependent field-effect mobility This is the
basic focus of the Algarve Model for organic electronic materials; most research effort was spent
on these devices. ... 631, CEOT. References [1] N. Tessler, Adv. Mat. 21, 1 (2009). ...
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Broadband Chaotic Signals and Breather Oscillations in an Optoelectronic Oscillator Incorporating a Microwave Photonic Filter

J Yao, B Romeira, F Kong, W Li, J Figueiredo…2014 - ieeexplore.ieee.org
... JML Figueiredo is with the Center for Electronics, Optoelectronics and Telecommunications,
Department of Physics, University of the Algarve, 8005-139 Faro, Portugal. J. Javaloyes is with
the Departament de Fisica, Universitat de les Illes Baleares, Palma E-07122, Spain. ...
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Neuromorphic opto-electronic integrated circuits for optical signal processing

B Romeira, J Javaloyes, S Balle… - … of Optics and …, 2014 - proceedings.spiedigitallibrary.org
... B. Romeira*a, J. Javaloyesb, S. Ballec, O. Pirob, R. Avóa, JML Figueiredoa aDepartamento de
Física, Centro de Electrónica, Optoelectrónica e Telecomunicacões (CEOT), Universidade do
Algarve, Campus de Gambelas, 8005-139 Faro, Portugal; bDept. de Física, Univ. ...
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Stochastic induced dynamics in neuromorphic optoelectronic oscillators

B Romeira, R Avó, J Javaloyes, S Balle… - Optical and Quantum …, 2014 - Springer
... B. Romeira (B) · R. Avó · JML Figueiredo Departamento de Física, Centro de Electrónica,
Optoelectrónica e Telecomunicacões (CEOT), Universidade do Algarve, Campus de Gambelas,
8005-139 Faro, Portugal e-mail: bmromeira@ualg.pt J. Javaloyes Dept. de Física, Univ. ...
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[HTML] Photo-Detectors Integrated with Resonant Tunneling Diodes

B Romeira, LM Pessoa, HM Salgado, CN Ironside… - Sensors, 2013 - mdpi.com
... Figueiredo 1. 1. Centro de Electrónica, Optoelectrónica e Telecomunicaçõe s (CEOT),
Departamento de Física, Universidade do Algarve, Campus de Gambelas, 8005-139
Faro, Portugal; E-Mail: jlongras@ualg.pt. 2. INESC TEC ...

Synchronization of optically coupled resonant tunneling diode oscillators

B Romeira, JML Figueiredo… - 8th Ibero …, 2013 - proceedings.spiedigitallibrary.org
... aCentro de Electrónica, Optoelectrónica e Telecomunicaç˜oes (CEOT), Departamento de Fısica,
Universidade do Algarve, 8005-139 Campus de Gambelas, Faro, Portugal; bSchool of
Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom; cInstituto de ...

An optically modulated radio frequency backscatter wireless data link

HI Cantú, CN Ironside, B Romeira… - Lasers and Electro- …, 2013 - ieeexplore.ieee.org
... HI Cantú1, CN Ironside1, B. Romeira², AE Kelly1, and JML Figueiredo² 1. School of Engineering,
University of Glasgow, Rankine Building, G12 8LT, UK 2. Physics Department, CEOT, at the
Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal ...

Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors

B Romeira, J Javaloyes, CN Ironside… - Optics …, 2013 - opticsinfobase.org
... Bruno Romeira,1,∗ Julien Javaloyes,2 Charles N. Ironside,3 José ML Figueiredo,1 Salvador
Balle,2 and Oreste Piro2 1Centro de Electrónica, Optoelectrónica e Telecomunicac˜oes (CEOT),
Departamento de Fısica, Universidade do Algarve, Campus de Gambelas, 8005-139 ...

An Optical to Wireless Data Link Using Radio Frequency Backscatter

HI Cantu, CN Ironside, AE Kelly, B Romeira… - IEEE microwave and …, 2013 - cat.inist.fr
... Auteur(s) / Author(s). CANTU HI (1) ; IRONSIDE CN (1) ; KELLY AE (1) ; ROMEIRA B. (1) ;
FIGUEIREDO JML (1) ; Affiliation(s) du ou des auteurs / Author(s) Affiliation(s). (1) Physics
Department, CEOT, Universidade do Algarve, Faro 8005-139, PORTUGAL Résumé / Abstract. ...
[PDF] from ualg.pt

Wireless Interrogation of an Optically Modulated Resonant Tunnelling Diode Oscillator

HI Cantú, H Salgado, B Romeira… - Microwave and …, 2013 - Wiley Online Library
... Microw. Opt. Technol. Lett., 55: 1728–1730. doi: 10.1002/mop.27734. Author
Information. 1 Departamento de Física, Centro de Electrónica, Optoelectrónica e
Telecomunicações (CEOT), Universidade do Algarve, Faro, Portugal. 2 ...

[PDF] Compact RF modulated laser diodes for atomic spectroscopy

K Seunarine, B Romeira, G Ternent, H Cantu, MJ Steer… - w3.ualg.pt
... University of Glasgow, School of Engineering, Glasgow G12 8LT, Great Britain.
1Universidade do Algarve, CEOT, 8005-139 Faro, Portugal. 2University of Western
Australia, School of Physics, Crawley, WA 6009, Australia. Presenting ...

Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

TA Krajewski, P Stallinga, E Zielony… - Journal of Applied …, 2013 - scitation.aip.org
... Lotnikow 32/46, 02-668 Warsaw, Poland 2Center of Electronics, Optoelectronics and
Telecommunications (CEOT) Universidade do Algarve, Campus de Gambelas, 8005-139 Faro,
Portugal 3Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27 ...

Experimental evaluation of optimum modulation formats for pico-cellular access networks based on resonant tunneling diodes

LM Pessoa, MC Monteiro, MR Pereira… - … (ICTON), 2013 15th …, 2013 - ieeexplore.ieee.org
... LM Pessoa1, MC Monteiro, MR Pereira1, HM Salgado1, B. Romeira2 and JML Figueiredo2 1
INESC TEC, Faculdade de Engenharia, Universidade do Porto, Portugal 2 Departamento de
Física, CEOT, Universidade do Algarve, Portugal email: luis.m.pessoa@inescporto.pt ...

Modulation accuracy of binary phase‐shift keying signal broadcast after injection locking of a resonant tunneling diode microwave oscillator

HI Cantú, B Romeira, JML Figueiredo… - Microwave and …, 2013 - Wiley Online Library
... Author Information. 1 Departamento de Física, CEOT, Universidade do Algarve, Campus de
Gambelas, 8005-139 Faro, Portugal. 2 ... Departamento de Física, CEOT, Universidade do Algarve,
Campus de Gambelas, 8005-139 Faro, Portugal. Publication History. ...

Delayed feedback dynamics of liénard-type resonant tunneling-photo-detector optoelectronic oscillators

…, JML Figueiredo, CN Ironside… - … , IEEE Journal of, 2013 - ieeexplore.ieee.org
Abstract—We use nonlinear dynamics approach for studying delayed feedback
optoelectronic oscillators (OEOs) formed by hybrid integration of resonant tunneling diode
(RTD) photodetectors with laser diodes, in both single and dual optical fiber feedback ...
Cited by 11 Related articles All 3 versions Cite

28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power

J Wang, L Wang, C Li, B Romeira… - Electronics Letters, 2013 - ieeexplore.ieee.org
... C. Li and E. Wasige (High Frequency Electronics Group, School of Engineering, University of
Glasgow, Glasgow, G12 8LT, United Kingdom) E-mail: Edward.Wasige@glasgow.ac.uk B.
Romeira (CEOT, Department of Physics, University of the Algarve, 8005-139 Faro, Portugal) ...

Conversion of phase modulated signals from optical network to wireless domain using resonant tunneling diode optoelectronic integrated circuits

HI Cantu, BM Romeira, K Seunarine… - Optical Fiber …, 2012 - opticsinfobase.org
... HI Cantú1*, B. Romeira1, K. Seunarine2, AE Kelly2, CN Ironside2 and JML Figueiredo1
1Departamento de Física, CEOT, Universidade do Algarve, Campus de Gambelas, 8005-139
Faro, Portugal 2School of Engineering, Rankine Building, University of Glasgow, Glasgow G12 ...
Cited by 3 Related articles All 4 versions Cite

Resonant tunneling diode optoelectronic circuits applications in radio-over-fiber networks

HI Cantú, B Romeira, AE Kelly… - Microwave Theory …, 2012 - ieeexplore.ieee.org
... HI Cantú, B. Romeira, and JML Figueiredo are with the Departamento de Física, Centro
de Electrónica, Optoelectrónica e Telecomunicaēoes (CEOT), Universidade do Algarve,
8005-139 Faro, Portugal (e-mail: hiquirino@ualg.pt). ...

New electronic memory device concepts based on metal oxide-polymer nanostructures planer diodes

A Kiazadeh, PRF Rocha, Q Chen… - … Innovation for Value …, 2012 - Springer
... project n.º 703, from Fundação para Ciência e Tecnologia (FCT) through the research Unit, Center
of Electronics Optoelectronics and Telecommunications (CEOT), REEQ/601/EEI/2005 and the
POCI 2010, FEDER and the organic chemistry laboratories in Algarve University. ...
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Non-volatile memory device using a polymer modified nanocrystal

A Kiazadeh, HL Gomes, AM da Costa… - Materials Science and …, 2011 - Elsevier
... a Center of Electronics Optoelectronics and Telecommunications (CEOT),
Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal; b Centro
de Investigação em Química do Algarve, Universidade do Algarve ...
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Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

PF Rocha, HL Gomes, A Kiazadeh, Q Chen… - MRS …, 2011 - Cambridge Univ Press
... L. Gomes 1 , Asal Kiazadeh1, Qian Chen1, Dago M. de Leeuw2 and Stefan CJ Meskers3 1 Center
of Electronics Optoelectronics and Telecommunications (CEOT), Universidade do Algarve,
Campus de Gambelas, 8005-139 Faro, Portugal 2 Philips Research Labs, High Tech. ...

Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

HL Gomes, PRF Rocha, A Kiazadeh… - Journal of Physics D: …, 2011 - iopscience.iop.org
... 1 Center of Electronics Optoelectronics and Telecommunications (CEOT) Universidade do Algarve,
Campus de Gambelas, 8005-139 Faro, Portugal 2 Philips Research Laboratories, Professor
Holstlaan 4, 5656 AA Eindhoven The Netherlands 3 Molecular Materials and ...

DC characterization of tunnel diodes under stable non-oscillatory circuit conditions

L Wang, JML Figueiredo, CN Ironside… - Electron Devices, IEEE …, 2011 - ieeexplore.ieee.org
Abstract—A common problem in designing with Esaki tunnel-ing diodes in circuits is
parasitic oscillations, which occur when these devices are biased in their negative
differential resistance (NDR) region. Because of this, the measured current–voltage (I–V) ...
Cited by 9 Related articles All 9 versions Cite

Nonlinear dynamics of a Liénard delayed-feedback optoelectronic oscillator

B Romeira, JML Figueiredo, CN Ironside… - … (INDS) & 16th Int'l …, 2011 - ieeexplore.ieee.org
... Bruno Romeira, José ML Figueiredo Department of Physics, CEOT University of Algarve Faro,
Portugal Email: bmromeira@ualg.pt Charles N. Ironside, Kris Seunarine Department of
Electronics and Electrical Enginnering University of Glasgow Glasgow, UK ...

Planar non-volatile memory based on metal nanoparticles

A Kiazadeh, HL Gomes, AR Da Costa… - MRS …, 2011 - Cambridge Univ Press
... A. Kiazadeh1, HL Gomes1, AR Da Costa2, P. Rocha2, Q. Chen2, JA Moreira2, DM De Leeuw3
and SCJ Meskers 4 1 Center of Electronics Optoelectronics and Telecommunications (CEOT)
2 Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de ...

Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Q Chen, BF Bory, A Kiazadeh, PRF Rocha… - Applied Physics …, 2011 - scitation.aip.org
... Scitation Author Page. PubMed. Google Scholar. View Affiliations Hide Affiliations. Affiliations:
1 Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade
do Algarve, Campus de Gambelas, Faro 8005-139, Portugal. ...
[PDF] from atb-potsdam.de

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

A Kiazadeh, PR Rocha, Q Chen, HL Gomes - Technological Innovation for …, 2011 - Springer
... project n.º 703, from Fundação para Ciência e Tecnologia (FCT) through the research Unit, Center
of Electronics Optoelectronics and Telecommunications (CEOT), REEQ/601/EEI/2005 and the
POCI 2010, FEDER and the organic chemistry laboratories in Algarve University. ...
Cited by 2 Related articles All 3 versions Cite

Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

CN Ironside, M Haji, L Hou… - … of Optics and …, 2011 - proceedings.spiedigitallibrary.org
... K. Seunarinea, Bruno Romeirab, José ML Figueiredob aSchool of Engineering, University of
Glasgow, G12 8LT Glasgow, UK; bDepartment of Physics, Center of Electronics, Optoelecronics
and Telecommunications (CEOT), University of Algarve, 8005-139 Faro, Portugal ...

Optoelectronic oscillator topologies based on resonant tunneling diode fiber optic links

B Romeira, JML Figueiredo… - … of Optics and …, 2011 - proceedings.spiedigitallibrary.org
... Bruno Romeira* a , José M. L Figueiredo a , Kris Seunarine b , Charles N. Ironside b , a
Department of Physics, CEOT, University of Algarve, 8005-139 Faro, Portugal; b School of
Engineering, University of Glasgow, G12 8LT Glasgow, UK ABSTRACT ...
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Electronic transport in organic materials: comparison of band theory with percolation/(variable range) hopping theory

P Stallinga - Advanced Materials, 2011 - Wiley Online Library
... Email: P. Stallinga (pjotr@ualg.pt). ... in describing all the organic electronic materials and devices,
summarized in the book Electrical Characterization of Organic ... the direct result of the previously
mentioned Poole-Frenkel concept that mobility depends on the electric (drain–source ...
Cited by 19 Related articles All 9 versions Cite

A self-synchronized optoelectronic oscillator based on an RTD photodetector and a laser diode

…, CN Ironside, AE Kelly, JML Figueiredo - Photonics …, 2011 - ieeexplore.ieee.org
Abstract—We propose and demonstrate a simple and stable low-phase noise optoelectronic
oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling
diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo- ...
Cited by 13 Related articles All 10 versions Cite

Optical control of a resonant tunneling diode microwave-photonic oscillator

B Romeira, JML Figueiredo, CN Ironside… - Photonics …, 2010 - ieeexplore.ieee.org
Abstract—We report on optical injection-locking of a microwave-photonic oscillator based on
the integration of a resonant tunneling diode optical waveguide photo-detector with a
communication laser diode. The oscillator locking was achieved with in-fiber optical ...
Cited by 16 Related articles All 8 versions Cite

[HTML] Resonant tunnelling optoelectronic circuits

J Figueiredo, B Romeira, T Slight, C Ironside - 2010 - intechopen.com
Electrical equivalent circuit of an RTD represented by a capacitance in parallel with a voltage
dependent current source F(V). The inductance L and the resistor R are due to bonding wires
and contacts. Figure 4. Electrical equivalent circuit of an RTD represented by a ...
Cited by 5 Related articles All 9 versions Cite

[PDF] Optical injection locking of a resonant tunneling diode-optical waveguide photo-detector

B Romeira, JML Figueiredo, CN Ironside… - Proc. ECIO …, 2010 - researchgate.net
Abstract—We report photo-detection and optical injection locking of a resonant tunneling
diode-optical waveguide (RTDOW) voltage controlled oscillator (VCO). When incorporated
in a resonant tank the RTD-OW photo-detector is capable of locking to optical radio- ...
Cited by 1 Related articles All 2 versions Cite Save

[PDF] Non-volatile, rewritable polymer memory diodes

SCJ Meskers, HL Gomes, DM De Leeuw, 2010 - itrs.net
... scjmeskers@tue.nl 2 Center of Electronics Optoelectronics and Telecommunications (CEOT),
Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal. 3 Philips Research
Laboratories, High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands. ...
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Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

BF Bory, SCJ Meskers, RAJ Janssen… - Applied Physics …, 2010 - scitation.aip.org
... Gomes,2 and Dago M. de Leeuw3 1Molecular Materials and Nanosystems, Eindhoven University
of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands 2Center of Electronics
Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de ...

Nonlinear dynamics of resonant tunneling optoelectronic circuits for wireless/optical interfaces

B Romeira, JML Figueiredo, TJ Slight… - … , IEEE Journal of, 2009 - ieeexplore.ieee.org
Abstract—We report on experimental and modeling results on the nonlinear dynamics of a
resonant-tunneling-diode-based (RTD) optoelectronic circuits that can be used as the basis
of a wireless/optical interface for wireless access networks. The RTD-based circuits are ...
Cited by 17 Related articles All 11 versions Cite

Wireless/photonics interfaces based on resonant tunneling diode optoelectronic oscillators

B Romeira, J Figueiredo, T Slight, L Wang… - … on Lasers and …, 2009 - opticsinfobase.org
Abstract We employ phase synchronization for converting low power wireless signals to the
optical domain and optical injection locking for converting optical sub-carrier signals to the
electric domain by using resonant tunneling diode oscillator circuits.
Cited by 6 Related articles All 5 versions Cite

[PDF] Wireless-Photonics-Wireless Interfaces Based on Resonant Tunneling Diode Optoelectronic Oscillators

JML Figueiredo, CN Ironside, B Romeira, TS Slight…  2009 - w3.ualg.pt
... 1 Universidade do Algarve, CEOT, Departamento de Física, Campus de Gambelas, 8005-139
Faro, Portugal 2 University of Glasgow, Department of Electronics and Electrical Engineering,
Glasgow G12 8LT, UK * Phone: +351 289 800 987/905, Fax: +351 289 800 066, E-Mail ...
[PDF] from ualg.pt

Chaotic dynamics in resonant tunneling optoelectronic voltage controlled oscillators

B Romeira, JML Figueiredo… - Photonics …, 2009 - ieeexplore.ieee.org
... are controlled accurately and reproducibly by the RTD, we anticipate this con- cept can be ... are
with the Centro de Electrónica, Op- toelectrónica e Telecomunicações (CEOT), Departmento
de Física, Faculdade de Ciências e Tecnologia, Universidade do Algarve, 8005-139 ...
Cited by 8 Related articles All 8 versions Cite

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

ME Lopes, HL Gomes, MCR Medeiros… - Applied Physics …, 2009 - scitation.aip.org
... ME Lopes,1 HL Gomes,1,a) MCR Medeiros,1 P. Barquinha,2 L. Pereira,2 E. Fortunato,2 R.
Martins,2 and I. Ferreira2 1Centre of Electronic Optoelectronics and Telecommunications (CEOT),
Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal ...
Cited by 97 Related articles All 6 versions Cite

Magnetic and transport properties of diluted granular multilayers

HG Silva, HL Gomes, YG Pogorelov… - Journal of Applied …, 2009 - scitation.aip.org
... HG Silva,1,2,a HL Gomes,1,b YG Pogorelov,2,c LMC Pereira,2 GN Kakazei,2,3 JB Sousa,2 JP
Araújo,2 JFL Mariano,4 S. Cardoso,5 and PP Freitas5 1Center of Electronic Optoelectronics and
Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005 ...
[PDF] from wseas.us

Resistive switching in nanostructured thin films

H Silva, HL Gomes, YG Pogorelov… - Applied Physics …, 2009 - ieeexplore.ieee.org
... G. Pogorelov,2 P. Stallinga,1 DM de Leeuw,3 JP Araujo,2 JB Sousa,2 SCJ Meskers,4 G.
Kakazei,2 S. Cardoso,5 and PP Freitas5 1Center of Electronics Optoelectronics and
Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro ...

Metal–Insulator–Metal Transistors

P Stallinga, VAL Roy, ZX Xu, HF Xiang… - Advanced …, 2008 - Wiley Online Library
... COMMUNICA TION [*] Prof. P. Stallinga University of The Algarve CEOT, Campus
de Gambelas Faro 8005-139 (Portugal) E-mail: pjotr@ualg.pt Prof. VAL Roy, Z.-X.
Xu, Dr. H.-F. Xiang, Prof. C.-M. Che Department of Chemistry ...

Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode

B Romeira, JML Figueiredo, TJ Slight, L Wang… - IET optoelectronics, 2008 - IET
... 1Centro de Electrónica, Optoelectrónica e Telecomunicaçoes (CEOT), Universidade do Algarve,
Campus de Gambelas, 8005-139 Faro, Portugal 2Department of Electronics and Electrical
Engineering, University of Glasgow, Glasgow G12 8LT, UK 3Instituto de Microelectrónica ...

Self-oscillation and period adding from resonant tunnelling diode–laser diode circuit

JML Figueiredo, B Romeira, TJ Slight, L Wang… - Electronics Letters, 2008 - IET
... Ciências e Tecnologia, Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
Current address of B. Romeira: Centro de Electrónica, Optoelectrónica e Telecomunicaço˜es
(CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal ...
[PDF] from researchgate.net

Spatially-resolved photocapacitance measurements to study defects in a-Si: H based p–i–n particle detectors

…, M Vieira, F Wuensch, M Kunst, E Morgado, P Stallinga… - Thin Solid Films, 2008 - Elsevier
... Abstract. Thick large-area particle or X-ray detectors suffer degradation during operation
due to creation of defects that act as deep traps. ... 3) is therefore not a set-up related time
constant, but indeed reflects carrier release from deep traps. ...
Cited by 2 Related articles All 14 versions Cite

Switching dynamics in non-volatile polymer memories

F Verbakel, SCJ Meskers, RAJ Janssen, HL Gomes… - Organic …, 2008 - Elsevier
... b The Netherlands and Dutch Polymer Institute (DPI), PO Box 902, 5600 AX Eindhoven, The
Netherlands; c Centre of Electronic Optoelectronics and Telecommunications (CEOT),
Universidade do Algarve, Campus de Gambelas, 8000 Faro, Portugal; ...

Switching in polymeric resistance random-access memories (RRAMS)

HL Gomes, ARV Benvenho, DM De Leeuw, M Cölle… - Organic …, 2008 - Elsevier
... a Universidade do Algarve, Centre of Electronic Optoelectronics and
Telecommunications (CEOT), Campus de Gambelas, 8000 Faro, Portugal; b Philips
Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The ...
Cited by 31 Related articles All 10 versions Cite

Study of trap states in zinc oxide (ZnO) thin films for electronic applications

C Casteleiro, HL Gomes, P Stallinga, L Bentes… - Journal of Non- …, 2008 - Elsevier
... Algarve, Faculty of Science and Technology, Campus de Gambelas, 8005-139 Faro, Portugal;
b Departamento de Física, Instituto Superior Técnico, Lisboa, Portugal. Available online 20
February 2008. ... 631 Center of Electronics Optoelectronics and Telecommunications (CEOT). ...
Cited by 18 Related articles All 8 versions Cite

Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications

D Timmerman, I Izeddin, P Stallinga, IN Yassievich… - Nature …, 2008 - nature.com
Abstract For optimal energy conversion in photovoltaic devices (electricity to and from light)
one important requirement is that the full energy of the photons is used. However, in solar
cells, a single electron–hole pair of specific energy is generated when the incoming ...
Cited by 191 Related articles All 14 versions Cite

Determining carrier mobility with a metalinsulatorsemiconductor structure

P Stallinga, ARV Benvenho, ECP Smits… - Organic …, 2008 - Elsevier
The electron and hole mobility of nickel-bis (dithiolene)(NiDT) are determined in a metal
insulatorsemiconductor (MIS) structure using admittance spectroscopy. The relaxation
times found in the admittance spectra are attributed to the diffusion time of carriers to ...
Cited by 10 Related articles All 11 versions Cite

Modeling electrical characteristics of thin-film field-effect transistors: III. Normally-on devices

P Stallinga, HL Gomes - Synthetic Metals, 2008 - Elsevier
... Universidade do Algarve, FCT/DEEI, Campus de Gambelas, 8005-139 Faro, Portugal.
Received 14 March 2007 Accepted 18 March 2008 Available online 1 May 2008.
Abstract. The thin-film field-effect-transistor model recently ...
Cited by 1 Related articles All 8 versions Cite

A Liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment

…, JML Figueiredo, E Wasige, CN Ironside - … , IEEE Journal of, 2008 - ieeexplore.ieee.org
Abstract—We report on a hybrid optoelectronic integrated circuit based on a resonant
tunnelling diode driving an optical communications laser diode. This circuit can act as a
voltage controlled oscillator with optical and electrical outputs. We show that the oscillator ...
Cited by 28 Related articles All 11 versions Cite

Reproducible resistive switching in nonvolatile organic memories

F Verbakel, SCJ Meskers, RAJ Janssen… - Applied Physics …, 2007 - scitation.aip.org
... DPI), PO Box 902, 5600 AX Eindhoven, The Netherlands Henrique L. Gomes Centre of Electronic
Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de
Gambelas, 8000 Faro, Portugal Michael Cölle, Michael Büchel, and Dago M. de Leeuw ...
Cited by 81 Related articles All 6 versions Cite

Nanocomposite field effect transistors based on zinc oxide/polymer blends

ZX Xu, VAL Roy, P Stallinga, M Muccini… - Applied physics …, 2007 - scitation.aip.org
The authors have examined the field effect behavior of nanocomposite field effect transistors
containing ZnO (zinc oxide) tetrapods or nanocrystals dispersed in a polymer matrix of poly
[2-methoxy, 5-(2-ethylhexyloxy)-1, 4-phenylenevinylene](MEH-PPV). The electrical ...
Cited by 70 Related articles All 8 versions Cite

Metal contacts in thin-film transistors

P Stallinga, HL Gomes - Organic electronics, 2007 - Elsevier
The effects of metal contacts on the electrical characteristics in thin-film transistors are
discussed. It is found that the effects of these contacts are twofold. First, a constant potential
that can range from zero to some volts (half the bandgap) is added to the entire channel. ...
Cited by 9 Related articles All 5 versions Cite

Modeling electrical characteristics of thin-film field-effect transistors: II: Effects of traps and impurities

P Stallinga, HL Gomes - Synthetic metals, 2006 - Elsevier
... Modern materials, such as most organics, do not reach that level, yet, and a high density
of deep levels is to be expected. ... In view of the model described here, this can be
attributed to trapping of free charge on deep localized states. ...
Cited by 27 Related articles All 5 versions Cite

Modeling electrical characteristics of thin-film field-effect transistors: I. Trap-free materials

P Stallinga, HL Gomes - Synthetic metals, 2006 - Elsevier
... Universidade do Algarve, FCT, Campus de Gambelas, Faro, Portugal. Received 23 June
2006 Accepted 20 September 2006 Available online 13 November 2006. Abstract. A new
analytical model is developed for thin-film field-effect transistors (TFTs). ...
Cited by 23 Related articles All 6 versions Cite

Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer–Neldel rule

P Stallinga, HL Gomes - Organic electronics, 2006 - Elsevier
... Universidade do Algarve, Facudade de Ciencias e Tecnologia, Campus de Gambelas,
8005-139 Faro, Portugal. Received 16 May 2006 Revised 29 September 2006 Accepted
4 October 2006 Available online 2 November 2006. Abstract. ...
Cited by 15 Related articles All 7 versions Cite

Electrical instabilities in organic semiconductors caused by trapped supercooled water

HL Gomes, P Stallinga, M Cölle… - Applied physics …, 2006 - scitation.aip.org
... HL Gomesa and P. Stallinga Universidade do Algarve, Faculdade de Ciências e Tecnologia,
Campus de Gambelas, 8005-139 Faro, Portugal M ... to thank the Portuguese Foundation for Science
and Technology (FCT) for financial support of this work (Research Unit 631-CEOT). ...
Cited by 58 Related articles All 7 versions Cite

The effect of water related traps on the reliability of organic based transistors

HL Gomes, P Stallinga, M Cölle, F Biscarini… - Journal of non- …, 2006 - Elsevier
... Holstlaan 4, 5656 AA Eindhoven, Netherlands; c CNR-Istituto per lo Studio dei Materiali
Nanostrutturati, Via P. Gobetti 101, I-40129 Bologna, Italy. Available online 24 April 2006. ... Above
280 K liquid form of water can act as a deep trap state. ... 5]; HL Gomes, P. Stallinga, F. Dinelli, M ...
Cited by 13 Related articles All 8 versions Cite

Traps states as an explanation for the Meyer-Neldel rule in organic semiconductors, P. Stallinga, H.L. Gomes, Org. Electr. 6, 137 (2005)    

Coherent approach to transport and noise in double-barrier resonant diodes

…, VE Lyubchenko, CN Ironside, JML Figueiredo… - Physical Review B, 2004 - APS
Abstract We implement a quantum approach which includes long range Coulomb interaction
and investigate current voltage characteristics and shot noise in double-barrier resonant
diodes. The theory applies to the region of low applied voltages up to the region of the ...
Cited by 23 Related articles All 8 versions Cite

Modeling of light-sensitive resonant-tunneling-diode devices

…, JML Figueiredo, CN Ironside - Journal of applied …, 2004 - scitation.aip.org
We present a method to include the effects of light excitation on two different models of
resonant-tunneling-diode-based devices. Our approach takes into account both
photoconductive and charge accumulation effects responsible for shifting the static I–V ...
Cited by 5 Related articles All 13 versions Cite

Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism, C. Santato, R. Capelli, M.A. Loi, M. Murgia, F. Cicoira, V.A.L. Roy, P. Stallinga, R. Zamboni, C. Rost, S.F. Karg, and M. Muccini , Synthetic Metals 146, 329 (2004)    

Bias-Induced threshold voltages shift in thin-film organic transistors, H.L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, D.M. De Leeuw, T. Muck, J. Geurts, L.W. Molenkamp, V. Wagner, Appl. Phys. Lett. 84, 3184 (2004)    

Electronic transport in field-effect transistors of sexithiophene, P. Stallinga, H.L. Gomes, F. Biscarini, M. Murgia, D.M. de Leeuw, J. Appl. Phys. 96, 5277 (2004)    

Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport

…, CN Ironside, JML Figueiredo… - Semiconductor …, 2003 - iopscience.iop.org
Abstract. Shot noise suppression in double barrier resonant tunnelling diodes with a Fano
factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to
be a signature of coherent transport regime and can occur at zero temperature as a ...
Cited by 20 Related articles All 11 versions Cite Save

Silicon vacancy containing two hydrogen atoms studied with electron paramagnetic resonance and infrared absorption spectroscopy, P. Johannesen, R. Jakobsen, P. Stallinga, B.B. Nielsen, J.R. Byberg, Phys. Rev. B 66, 235201 (2002)    

Interface state mapping in a Schottky barrier of the organic semiconductor terrylene, P. Stallinga, H.L. Gomes, M. Murgia, K. Müllen, Org. Electr. 3, 43 (2002)    

[PDF] Current noise in resonance tunnel diodes based on InGaAlAs heterostructures

…, VE Lyubchenko, CN Ironside, JML Figueiredo… - … AND ELECTRONICS C …, 2002 - w3.ualg.pt
Abstract—Noise in resonance tunnel diodes based on InGaAlAs structures is studied at two
frequencies. A shot noise caused by the current flowing through two barriers of the
heterostructure is identified. It was found that if the voltage across the structure is within ...
Cited by 12 Related articles All 4 versions Cite

Optoelectronic device

C Ironside, JL Figueiredo - 2002 - Google Patents
There is disclosed an optoelectronic device, particularly an optoelectronic modulator (5 a)
including a resonant tunnelling diode (RTD)(15 a) and operating by the electro-optic effect.
The optoelectronic modulator device (5 a) comprises a waveguide means (10 a) including ...
Cited by 16 Related articles All 2 versions Cite

Electric field switching in a resonant tunneling diode electroabsorption modulator

JML Figueiredo, CN Ironside… - … , IEEE Journal of, 2001 - ieeexplore.ieee.org
Abstract—The basic mechanism underlying electric field switching produced by a resonant
tunneling diode (RTD) is analyzed and the theory compared with experimental results;
agreement to within 12% is achieved. The electroabsorption modulator (EAM) device ...
Cited by 23 Related articles All 17 versions Cite

Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization, P. Stallinga, H.L. Gomes, H. Rost, A.B. Holmes, M.G. Harrison, and R.H. Friend , J. Appl. Phys. 89, 1713 (2001)
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