• Plenary Speakers
GaN-based3-Dimensional Devices: FinFET to Nanowire-FET
Jung-Hee Lee

Kyungpook National University, Korea

Utilization of spin polarized electrons for future electronis
Joonyeon Chang

Korea Institute of Science and Technology (KIST), Korea


Materials design for versatile electron devices in the IoT era
Akira TORIUMI
University of Tokyo, Japan

  • Invited Speakers
Engineering of Vertically Integrated Nanowire in MOSFET and Its Application toward Versatile Memory Cells
Byung-Hyun Lee
Semiconductor R&D Center, Samsung Electronics, Korea

Thermal Transport in High-Power GaN Electronics
Jungwan Cho
Mechanical Engineering, Kyung Hee University, Korea

A physical model for set switching of phase-change memory
Yongwoo Kwon
Meterials Science and Engineering, Hongik University, Korea

Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes
Bin Liu
Nanjing University, China

Transparent oxide TFT array-based electrically tunable terahertz filter
Weizong Xu
Nanjing University, China

III-V semiconductor/Dielectric interface engineering and characterization
Jae-Gil Lee
Seoul National University, Korea

Latest Developments on SiGe SiGe BiCMOS Technologies with “More-than-Moore” Modules for mm-wave and THz Applications
Mehmet Kaynak
IHP, Germany

Sub-lithographic Patterning by Tilted Ion Implantation
Sangwan Kim
Department of Electrical and Computer Engineering, Ajou University, Korea

Silicon-based near infrared photodetector with high responsivity
Kihyun Kim
Creative IT Engineering, Pohang University of Science and Technology, Korea

Silicon-based Tunneling Field-Effect Transistors for Ultra-low Power Applications
Jun-Sik Yoon
Creative IT Engineering, Pohang University of Science and Technology, Korea

Noble functionalities created by "Yuragi/Fluctuation" in strongly correlated electron compounds
Hitoshi TABATA
University of Tokyo, Japan

Application of graphene to electronic devices including sensors
Kenjiro HAYASHI
FUJITSU, Japan

Effective annealing for Si film and for junction formation
Takashi NOGUCHI
University of the Ryukyus, Japan

Single-crystal graphene on SiC substrate: growth and applications

Masao NAGASE
Tokushima University, Japan

Design of nanoarchitecture for independent control of carrier and phonon transports
Yoshiaki NAKAMURA
Osaka University

Ion implantation technique for controlling conduction type of GaN
Tetsuo NARITA
Toyota Central R&D LABS., INC., Japan

MEMS Metamaterial Tunable Filters for THz Optics
Hiroshi TOSHIYOSHI
University of Tokyo, Japan

MOS interface engineering for advanced SiC and GaN power devices
Takuji HOSOI
Osaka University, Japan

GaN-HEMT Device Technologies for W-band High-Power Amplifier
Shiro OZAKI
Fujitsu Lab. Ltd., Japan

Related to CNT

Yutaka OHNO
Nagoya University, Japan

Technology trend of ultra-high data rate wireless CMOS transceivers
Akira MATSUZAWA
Tokyo Institute of Tech., Japan