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EEE 455 (Compound Semiconductors and Heterojunction Devices)

Course Contents:

Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap, density of carriers in intrinsic and doped compound semiconductors.
Hetero-Junctions: Band alignment, band offset, Anderson.s rule, single and double sided hetero-junctions, quantum wells and quantization effects, lattice mismatch and strain and common hetero-structure material systems.
Hetero-Junction diode: Band banding, carrier transport and I-V characteristics.
Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics.
Hetero-structure bipolar transistor (HBT): Structure and operating principle, quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model, secondary effects and band diagram of a graded alloy base HBT.


02 10 2012

Marks for Class Tests 4 (EECE455, July 2012 semester) have been published

11 09 2012
          
Marks for Class Tests 3 (EECE455, July 2012 semester) have been published

28 08 2012
Marks for Class Tests 2 (EECE455, July 2012 semester) are now available 

25 07 2012
Marks for Class Tests 1 (EECE455, July 2012 semester) have been published