Dr. Andriy Kovalskiy
 
 
Publications
114 journal papers, 3 chapters in books,6 patents, 220+ conference contributions, 950+ citations, h-factor - 18
CITATION METRICS: http://scholar.google.com/citations?user=tC38xScAAAAJ                                     http://www.researcherid.com/rid/A-8566-2008                                            

Selected Peer-Reviewed Journal Publications: 

81 Mugoni C., Jain H., Montorsi M., Montecchi M., Kovalskiy A., Siligardi C. Structural origin of electrical conductivity of copper lithium metaphosphate glasses. Journal of Non-Crystalline Solids, vol. 497, 2016, p.91-97.

80
Trimble J., Golovchak R., Oelgoetz J., Brennan C., Kovalskiy A. Structural characterisation of tin fluorophosphate glasses doped with Er2O3. Physics and Chemistry of Glasses - European Journal of Glass Science and Technology Part B, vol. 57 (1), 2016, p. 27-31.

79
Shpotyuk O., Kovalskiy A., Trimble J., Vlcek M., Shpotyuk Ya., Koziukhin S. Intrinsic phase separation in low-temperature quenched arsenic trisulfide glass. Journal of Non-Crystalline Solids, vol. 430, 2015, p.16-20.

78
Cook J., Slang S., Golovchak R., Jain H., Vlcek M., Kovalskiy A. Structural features of spin-coated thin films of binary AsxS100−x chalcogenide glass system, Thin Solid Films, vol. 589, 2015, p. 642-648.

77
Slang S., Palka K., Loghina L., Kovalskiy A., Jain H., Vlcek M. Mechanism of the dissolution of As–S chalcogenide glass in n-butylamine and its influence on the structure of spin coated layers. Journal of Non-Crystalline Solids, vol. 426, 2015, p.
126-131.

76
Golovchak R.,  Choi Y. G.,  Kozyukhin S.,  Chigirinsky Yu.,  Kovalskiy A.,  Xiong-Skiba P.,  Trimble J., Pafchek R.,  Jain H. Oxygen incorporation into GST phase-change memory matrix, Applied Surface Science, vol. 332, 2015, p. 533-541.

75
Golovchak R., Lucas P., Oelgoetz J., Kovalskiy A., York-Winegar J., Saiyasombat C., Shpotyuk O., Feygenson M., Neuefeind J., Jain H. Medium range order and structural relaxation in As-Se network glasses through FSDP analysis, Materials Chemistry and Physics, vol. 153, 2015, p. 432-442.

74
Xu S.W., Wang R.P., Luther-Davies B., Kovalskiy A., Miller A.C., Jain H. Chemical order in GexAsySe1-x+y glasses probed by high resolution X-ray photoelectron spectroscopy, Journal of Applied Physics, vol. 115 (8), 2014, 083518.

73 Kovalskiy A.,
Vlcek M., Palka K., Golovchak R., Jain. H. Wavelength dependence of photostructural transformations in As2S3 thin films, Physics Procedia, vol. 44, 2013, p. 75-81. 

72
Palka K., Vlcek M., Kovalskiy A. Study of As50Se50 thin film dissolution kinetics in amine based solutions, Physics Procedia, vol. 44, 2013, p. 114-119.

71
York-Winegar J., Harper T., Brennan C., Oelgoetz J., Kovalskiy A., Structure of SnF2-SnO-P2O5 glasses, Physics Procedia, vol. 44, 2013, p. 159-165.


70 
Golovchak R., Kovalskiy A., Shpotyuk O., Jain H. Structural organization of As-rich selenide glasses, Solid State Communications, vol. 165, 2013, p.22–26. 

69 Kovalskiy A., Vlcek M., Jain. H. Electronic and atomic structure of amorphous thin films with high-resolution XPS: Examples of applications & limitations, J. Non- Crystalline Solids, vol. 377, 2013, p. 155-158.

68
Palumbo V., Kovalskiy A., Jain H., Huey B. D. Direct investigation of silver photodissolution dynamics and reversibility in arsenic trisulphide thin films by atomic force microscopy, Nanotechnology, vol. 24 (12), 2013, p. 125706-1-7. 

67
Choi Y. G., Kovalskiy A., Cheong B.-K., Jain H. Role of local structure in the phase change of GeTe films. Chemical Physics Letters, vol. 534, 2012, p. 58-61. 

66 Sati D., Kovalskiy A., Golovchak R., Jain H. Structure of SbGe40-xSe60 glasses around 2.67 average coordination number, Journal of Non-Crystalline Solids, vol. 358, 2012, p. 163-167. 
 
65 Golovchak R., Shpotyuk O., Iovu M., Kovalskiy A., Jain H. Topology and chemical order in AsxGexSe1-2x glasses: a high-resolution X-ray photoelectron spectroscopy study, Journal of Non-Crystalline Solids, vol. 357, 2011, 3454-3460.

64 Golovchak R., Kozdras A., Shpotyuk O., Gorecki Cz., Kovalskiy A., Jain H. Temperature-dependent structural relaxation in As40Se60 glass, Physics Letters A, vol. 375, 2011, p. 3032–3036.

63 Golovchak R., Kovalskiy A., Shpotyuk O., Jain H. In search of energy landscape in network glasses, Applied Physics Letters, vol. 98, 2011, p. 171905-1-3.

62 Golovchak R., Shpotyuk O., Kozyukhin S., Shpotyuk M., Kovalskiy A., Jain H. Short-range order evolution in S-rich Ge–S glasses by X-ray photoelectron spectroscopy, Journal of Non-Crystalline Solids, vol. 357, 2011, p. 1797–1803.

61 Takats V., Miller A. C., Jain H., Kovalskiy A., Kokenyesi S. Investigation of interdiffusion in Sb/As2S3 nano-layered structures by high-resolution X-ray photoelectron spectroscopy, Thin Solid Films, vol. 519 (10), 2011, p. 3437-3442.
 
60 Koziukhin S., Golovchak R.,  Kovalskiy A., Shpotyuk O., Jain H. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS, Semiconductors, vol. 45 (4), 2011, p. 423-426.

59 Kovalskiy A., Ganjoo A., Khalid S., Jain H. Combined high-resolution XPS and EXAFS study of Ag photodissolution in a-As2S3 thin film, Journal of Non-Crystalline Solids, vol. 356 (44-49) (2010), p. 2332-2336.

58 Zhang Y., Yang Y., Zheng J., Chen G., Cheng C., Hwang J. C. M., Ooi B. S., Kovalskiy A., Jain H. Effect of the interface glass on electrical performance of screen printed Ag thick-film contacts of Si solar cells. Thin Solid Films, vol. 518 (24), Suppl. 1 (2010), p. e111-e113.

57 Golovchak R., Shpotyuk O., McCloy J. S., Riley B. J., Windisch C.F., Sundaram S. K., Kovalskiy A., Jain H. Structural model of homogeneous As-S glasses derived from Raman spectroscopy and high-resolution XPS. Philosophical Magazine, vol. 90 (34) 2010, p. 4489–4501.

56 Kovalskiy A., Vlcek M., Cech J., Heffner W. R., Waits C. M., Dubey M, Jain H. Chalcogenide glass e-beam and photo-resists for ultrathin gray scale patterning. Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 8, 2009, p. 043012-1-11.

55 Mitkova M., Kovalskiy A., Jain H., Sakaguchi Y. Effect of photo-oxidation on the photodiffusion of silver in germanium chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, vol. 11, 2009, p. 1899-1906.

54 Kovalskiy A., Jain H.,Mitkova M. Evolution of chemical structure during silver photodiffusion into chalcogenide glass thin films. Journal of Non-Crystalline Solids, vol. 355 (37-42), 2009, p.1924-1929.

53 Golovchak R., Shpotyuk O., Koziukhin S., Kovalskiy A., Miller A.C., Jain H. Structural paradigm of Se-rich Ge-Se glasses by high-resolution X-ray photoelectron spectroscopy. Journal of Applied Physics, vol. 105, 2009, p. 103704-1-7.

52 Shpotyuk O.,  Golovchak R., Jain H., Kovalskiy A. Radiation-induced functionality of chalcogenide glasses probed by high-resolution XPS. Physics and Chemistry of Glasses: European Journal of Glass Science and Technology: Part B, vol. 49, 2008, p. 314-316.

51 Kovalskiy A., Neilson J.R., Miller A.C., Miller F.C., Vlcek M., Jain H. Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films. Thin Solid Films, vol. 516 (21), 2008 , p. 7511-7518.

50 Golovchak R., Shpotyuk O., Kozdras A., Vlcek M., Bureau B., Kovalskiy A., Jain H. Long-term physical ageing in As-Se glasses with short chalcogen chains. Journal of Physics: Condensed Matter, vol. 20 (24), 2008, p. 245107 (7 pp.).

49 Golovchak R., Shpotyuk O., Kovalskiy A., Miller A., Cech J., Jain H. Coordination defects in bismuth-modified arsenic selenide glasses: High-resolution X-ray photoelectron spectroscopy measurements. Physical Review B, vol. 77, 2008, p. 172201 (4 pp.). (Published also in Virtual Journal of Nanoscale Science & Technology).

48 Kovalskiy A., Miller A., Jain H., Mitkova M. In-situ measurements of X-ray induced silver diffusion into Ge30Se70 thin film. Journal of the American Ceramic Society, vol. 91 (3), 2008, p. 760-765.

47 Golovchak R., Kovalskiy A., Miller A., Jain H., Shpotyuk O. Structure of Se-rich As-Se glasses by high-resolution photoelectron spectroscopy. Physical Review B, vol. 76 (12), 2007, p. 125208 (7pp.). 

46 Kovalskiy A., Jain H., Neilson J.R., Vlcek M., Waits C.M., Churaman W., Dubey M. On the mechanism of gray scale patterning of Ag-containing As2S3 thin films. Journal of Physics and Chemistry of Solids, vol. 68, 2007, p. 920-925. 

45 Neilson J.R., Kovalskiy A., Vlcek M., Jain H., Miller F. Fabrication of nano-gratings in arsenic sulphide films. Journal of Non-Crystalline Solids, vol. 353, 2007, p. 1427-1430.  

44 Shpotyuk O., Kovalskiy A., Golovchak R., Zurawska A., Jain H. Radiation-induced defects in chalcogenide glasses characterized by optical spectroscopy, XPS and PALS methods. Physica Status Solidi C, vol. 4, 2007, p. 1147-1150.  

43 Balitska V., Kovalskiy A., Shpotyuk O., Vakiv M. On the instability effects in radiation-sensitive chalcogenide glasses. Radiation Measurements, vol. 42, 2007, p. 941-943. 

42 Shpotyuk O., Vakiv M., Butkiewicz B., Kovalskiy A., Golovchak R. On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses. Semiconductor Physics, Quantum Electronics & Optoelectronics, vol. 10 (3), 2007, p. 23-27.

41 Kovalskiy A., Jain H., Miller A., Golovchak R., Shpotyuk O. A study of reversible gamma-induced structural transformations in vitreous Ge23.5Sb11.8S64.7 by high resolution X-ray photoelectron spectroscopy. Journal of Physical Chemistry B, vol. 110, 2006, p. 22930-22934. 

40 Kovalskiy A., Vlcek M., Jain H., Fiserova A., Waits C.M., Dubey M. Development of chalcogenide glass photoresists for gray scale lithography. Journal of Non-Crystalline Solids, vol. 352, 2006, p. 589-594. 

39 Jain, H., Kovalskiy, A., Miller, A. An XPS study of the early stages of silver photodiffusion in Ag/a-As2S3 films. Journal of Non-Crystalline Solids, vol. 352, 2006, p. 562-566. 

38 Shpotyuk O., Kovalskiy A., Filipecki J., Kavetskyy T., Popescu M. Positron annihilation lifetime spectroscopy as experimental probe of free volume concepts in network glasses. Physics and Chemistry of Glasses: European Journal of Glass Science and Technology: Part B, vol. 47, 2006, p. 131-135. 

37 Kozdras A., Filipecki J., Hyla M., Shpotyuk O., Kovalskiy A., Szymura S. Nanovolume positron traps in glassy-like As3Se3. Journal of Non-Crystalline Solids, vol. 351, 2005, p. 1077-1081. 

36 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. Threshold restoration effects in gamma-irradiated chalcogenide glasses. Journal of Non-Crystalline Solids, vol. 351, 2005, p. 993-997. 

35 Kavetskyy T., Shpotyuk O., Kovalskiy A., Tsmots V. Structural-chemical approach for compositional dependences of gamma-induced optical effects in chalcogenide glasses of Ge-Sb-S system. Journal of Optoelectronics and Advanced Materials, vol. 5, 2005, p. 2299-2308. 

34 Kozdras A., Shpotyuk O., Kovalskiy A., Filipecki J. Modified positron annihilation model for glassy-like As2Se3. Acta Physica Polonica A, vol. 107, 2005, p. 832-836. 

33 Kovalskiy A. Compositional trends of radiation induced effects in ternary systems of chalcogenide glasses. Radiation Effects & Defects in Solids, vol. 158, 2003, p. 391-397.

32 Shpotyuk O., Kovalskiy A., Filipecki J., Hyla M., Kozdras A. A nanoscale characterisation of extended defects in glassy-like As2Se3 semiconductors with PAL technique. Physica B, vol. 340-342, 2003, p. 960-964. 

31 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. Post-irradiation thermally stimulated recovering of some ternary chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, vol. 5, No 5, 2003, p. 1169-1179. 

30 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R., Popescu M. Chemical interaction of chalcogenide vitreous semiconductors with absorbed impurities induced by gamma-irradiation. Journal of Optoelectronics and Advanced Materials, vol. 5, No 5, 2003, p. 1181-1185. 

29 Filipecki J., Shpotyuk O.I., Kozdras A., Kovalskiy A. Positron lifetime study of native vacancy-like defects in chalcogenide glasses. Radiation Physics and Chemistry, vol. 68, No 3-4, 2003, p. 557-559. 

28 Balitska V., Golovchak R., Kovalskiy A., Skordeva E., Shpotyuk O. Effect of Co60 gamma-irradiation on the optical properties of As-Ge-S glasses. Journal of Non-Crystalline Solids, vol. 326-327, 2003, p. 130-134. 

27 Shpotyuk O., Golovchak R., Kovalsky A., Kavetskyy T. Time and temperature stability of radiation-induced changes in optical properties of ternary chalcogenide glassy semiconductor systems. Functional Materials, vol. 10, No 2, 2003, p. 317-322.  

26 Kovalskiy A., Kavetskyy T., Plewa J., Shpotyuk O. Interpretation of radiation-induced phenomena in chalcogenide glasses of Ge–Sb–S system using free volume and covalent chemical bonds concepts. Solid State Phenomena, vol. 90-91, 2003, p. 241-246. 

25 Shpotyuk O., Filipecki J., Kozdras A., Kovalskiy A. Coordination positron-trapping centers in vitreous chalcogenide semiconductors. Physica Status Solidi C, vol. 0, No 2, 2003, p. 795-798.

24 Shpotyuk O., Filipecki J., Golovchak R., Kovalskiy A., Hyla M. Application of positron annihilation lifetime technique for gamma-irradiation stresses study in chalcogenide vitreous semiconductors. Advanced Engineering Materials, 2002, v. 4, No 8, p. 571-574. 

23 Shpotyuk O., Golovchak R., Kovalskiy A., Pamukchieva V., Skordeva E., Arsova D. On the mechanism of radiation-induced optical effects in vitreous As2S3-GeS2. Ukrainian Journal of Physical Optics, 2002, v. 3, No 2, p. 134-143.  

22 Shpotyuk O., Kovalskiy A. Compositional trends in radiation-optical properties of chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, 2002, v. 4, No. 3, p. 751-762.

21 Shpotyuk O., Filipecki J., Hyla M., Kovalskiy A., Golovchak R. Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation lifetime. Physica B, 2001, v. 308-310, p. 1011-1014. 

20 Shpotyuk O., Kovalskiy A., Mrooz O., Shpotyuk L., Pekhnyo V., Volkov S. Technological modification of spinel-based CuxNi1-x-yCo2yMn2-yO4 ceramics. Journal of the European Ceramic Society, 2001, v.21, p. 2067-2070. 

19 Mrooz O., Kovalski A., Pogorzelska J., Shpotyuk O., Vakiv M., Butkiewicz B., Maciak J. Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits. Microelectronics Reliability, 2001, v. 41, p. 773-777. 

18 Butkiewicz B., Golovchak R., Kovalskiy A., Shpotyuk O., Vakiv M. On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses. Radiation Effects & Defects in Solids, 2001, v. 153, p. 211-219. 

17 Shpotyuk O.I., Filipecki J., Golovchak R.Ya., Kovalskiy A.P., Hyla M. Radiation-defects in amorphous As-Ge-S studied by positron annihilation techniques. Journal of Optoelectronics and Advanced Materials, 2001, v. 3, No 2, p. 329-332. 

16 Kovalskiy A. Peculiarities of gamma-induced optical effects in ternary systems of amorphous chalcogenide semiconductors. Journal of Optoelectronics and Advanced Materials, 2001, v. 3, No 2, p. 323-327. 

15 Shpotyuk O., Hadzaman I., Mrooz O., Kovalskiy A., Vakiv M. Microscopic characterization of manganese-containing oxide ceramics for current protection of electric circuits. Practical Metallography, 2001, v. 32, p. 209-212. 

14 Shpotyuk O.I., Kavetsky T.S., Kovalskiy A.P., Lutciv R.V., Pamukchieva V.D. Radiation-induced changes of optical transmittance in vitreous semiconductors of GexSb40-xS60 system. Ukrainian Journal of Physics, 2001, v. 46, No 4, p. 495-498. 

13 Shpotyuk O.I., Golovchak R.Ya., Kovalskiy A.P., Vakiv M.M., Pamukchieva V.D., Arsova D.D., Skordeva E.R. Radiation optical effects in As2S3-GeS2 semiconducting glasses. Physics and Chemistry of Glasses, 2001, v. 42, No 2, p. 95-98.

12 Shpotyuk O., Vakiv M., Kovalskiy A.P., Skordeva E., Vateva E., Pamukchieva V., Golovchak R., Lutciv R. Radiation-induced effects in Ge-As-S chalcogenide glasses. Glass Physics and Chemistry, 2000, v. 26, No 3, p. 374-380.   

11 Skordeva E., Arsova D., Pamukchieva V., Vateva E., Golovchak R., Kovalskiy A.P., Shpotyuk O. gamma-induced changes in Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials, 2000, v.2, No 3, p. 259-266.  

10 Vynnik I.B., Dunets B.V., Kovalsky A.P. Ceramic humidity sensitive elements with intelligent tester of informative parameters. Functional Materials, 2000, v. 7, no 2, p. 319-322. 

9   Shpotyuk O.I., Golovchak R.Ya., Kavetsky T.S., Kovalskiy A.P., Vakiv M.M. Radiation-optical effects in glassy Ge-As(Sb)-S systems. Nuclear Instruments and Methods in Physics Research Section B - Beam Interaction with Materials & Atoms, 2000, v. 166-167, p. 517-520.

8   Kovalskiy A.P., Shpotyuk O.I., Hadzaman I.V., Mrooz O.Ya., Vakiv M.M. The influence of gamma-irradiation on electrophysical properties of spinel-based oxide ceramics. Nuclear Instruments and Methods in Physics Research B - Beam Interaction with Materials & Atoms, 2000, v. 166-167, p. 289-292.

Kavetskyy T.S., Kovalskiy A.P., Pamukchieva V.D., Shpotyuk O.I. IR impurity absorption in Sb2S3-GeS2(Ge2S3) chalcogenide glasses. Infrared Physics & Technology, 2000, v. 41, p. 41-45.

6  Shpotyuk O.I., Kovalskiy A.P., Skordeva E., Vateva E., Arsova D., Golovchak R.Ya., Vakiv M.M. Effect of gamma-irradiation on the optical properties of GexAs40-xS60 glasses. Physica B. Condensed Matter, 1999, v.271, p. 242-247.

5  Shpotyuk O.I., Skordeva E., Golovchak R.Ya., Pamukchieva V., Koval’skii A.P. Radiation-stimulated changes of transmission in As2S3-Ge2S3 chalcogenide glasses. Journal of Applied Spectroscopy, 1999, v.66, No 5, p. 657-660.

4  Shpotyuk O.I., Vakiv M.M., Matkovskii A.O., Kovalski A.P. Radiation-induced paramagnetic centers in amorphous chalcogenide semiconductors. Opto-Electronics Review, 1997, V.5, No 1, p. 39-41.

3  Hadzaman I.V., Kovalsky A.P., Mrooz O.Ya., Shpotyuk O.I. Thermal modification of ceramic composites based on manganese-containing cube spinels. Materials Letters, 1996, V.29, p.195-198.

Shpotyuk O.I., Matkovskii A.O., Kovalsky A.P., Vakiv M.M. Radiation-induced changes of amorphous As2S3 physical properties. Radiation Effects and Defects in Solids, 1995, v. 133, No 1, p. 1-4.

1  Shpotyuk O.I., Kovalsky A.P., Vakiv M.M., Mrooz O.Ya. Reversible radiation effects in vitreous As2S3. 1. Changes of physical properties. Physica Status Solidi A, 1994, v. 144, No 2, p. 277-283.

Other Papers:

34 Cech J., Swaminathan V., Wijewarnasuriya P., Currano L. J., Kovalskiy A., Jain H. Fabrication of freestanding SWCNT networks for fast microbolometric focal plane array sensor. Proceedings SPIE, 2010, vol. 7679, doi:10.1117/12.855589.

33 Kovalskiy A., Cech J., Tan C.L., Heffner W.R., Miller E., Waits C.M., Dubey M., Churaman W., Vlcek M., Jain H. Chalcogenide glass thin film resists for grayscale lithography. Proceedings SPIE, vol. 7273, 2009, p. 72734A1-A12.

32 Vlcek M., Kovalskiy A., Pribylova H., Cech J., Jain H. Evaluation of photosensitivity of As-S-Se thin layers for the fabrication of diffractive optical elements. Proceedings Materials Science and Technology 2009 Conference MS&T’09, October 25-29, 2009, Pittsburgh, PA. CD – 11 p.

31 Shpotyuk O., Kovalskiy A., Filipecki J. The application of radiation modification route for chalcogenide glasses. World Glass Plants and Accessories, vol. 4, 2005, p. 90-92. 

30 Kovalskiy A., Shpotyuk O., Golovchak R., Vakiv M. Post-irradiation relaxation of radiation-induced changes of optical absorption in chalcogenide glasses of Ge-As-S system. Sensor Electronics and Microsystem Technologies, No 1, 2005, p. 52-56. (in Russian) 

29 Vakiv M., Golovchak R., Kovalskiy A., Shpotyuk O. Conditions for application of chalcogenide vitreous alloys in the dosimetry of high-energetic gamma-quanta. Technology and Design in Electronic Devices, No 1 (55), 2005, p. 60-61. (in Russian) 

28 Kozdras A., Filipecki J., Hyla M., Shpotyuk O., Kovalskiy A. Positron trapping nanovolumes in glassy As2Se3. Scientific Works of Pedagogical University of Czestochowa. Chemistry, 2004, v. 8, p. 67-76.  

27 Shpotyuk O., Kavetskyy T., Kovalskiy A. Phenomenological model of radiation-induced optical effects in Sb2S3-GeS2(Ge2S3) chalcogenide glasses. Proceedings SPIE, 2003, vol. 5122, p. 95-103. 

26 Shpotyuk O., Kovalskiy A., Filipecki J., Kozdras A. The native open-volume microvoids concept in positron lifetime spectroscopy of chalcogenide vitreous semiconductors. Bulletin of Lviv University, Part physical, v. 35, 2002, p. 208-211.  

25 Kovalskiy A. Determination of concentration of radiation-induced structural defects in chalcogenide vitreous semiconductors. Physical Transactions of the Taras Schevchenko Scientific Society, v. 5, 2002, p. 35-40. (in Ukrainian) 

24 Kovalskiy A.P. Influence of high-energetic gamma-radiation on optical properties of chalcogenide glass system As-Sb-S. Bulletin of the National University „Lviv Polytechnics”. Electronics, 2002, No 455, p. 28-33. (in Ukrainian) 

23 Shpotyuk O.I., Balitska V.O., Vakiv M.M., Golovchak R.Ya., Kavetskyy T.S., Kovalskiy A.P., Matkovskii A.O. Radiation-induced phenomena in chalcogenide vitreous semiconductors (Short review). Bulletin of the National University „Lviv Polytechnics”. Electronics, 2002, No 459, p. 179-193. (in Ukrainian) 

22 Kovalskiy A.P. Compositional features of gamma-induced changes of optical properties for ternary systems of chalcogenide vitreous semiconductors. Bulletin of the National University „Lviv Polytechnics”. Electronics, 2001, No 430, p. 3-10. (in Ukrainian) 

21 Shpotyuk O., Kavetskyy T., Filipecki J., Kovalskiy A., Pamukchieva V. Radiation-induced optical effects in Sb2S3-GeS2 chalcogenide glasses. Scientific Works of Pedagogical University of Czestochowa. Chemistry, 2001, v. 5, p. 189-195.  

20 Shpotyuk O., Kavetskyy T., Kovalskiy A., Pamukchieva V. IR optical properties of Sb2S3-GeS2(Ge2S3) chalcogenide glasses and effect of gamma-irradiation. Proceedings SPIE, 2001, vol. 4415, p. 272-277. 

19 Shpotyuk O., Kavetskyy T., Kovalskiy A., Pamukchieva V. Gamma-irradiation effect on the optical properties of GexSb40-xS60 chalcogenide glasses. Proceedings SPIE, 2001, vol. 4415, p. 278-283. 

18 Hyla M.,  Mandecki Z., Filipecki J., Szpotiuk O., Mroz O., Kowalski A. Radial distribution function for amorphous semiconductors of As-Ge-S system. Scientific Works of Pedagogical University of Czestochowa. Chemistry, v. 3, 1999, p. 166-176.

17 Dunets B., Kravtsiv M., Vynnyk I., Kovalskiy A., Mrooz O., Shpotyuk O. Humidity sensors on the base of ceramic materials. Elektronika, 1998, vol. XXXIX, No 7-8, p. 30-32.

16 Vakiv M.M., Shpotyuk O.I., Mrooz O.Ya., Hadzaman I.V., Kovalskiy A.P. Electrical conductivity studies of temperature sensitive materials based on Mn, Ni, Co and Cu-containing spinels. Bulletin of Lviv University, Part physical, v. 31: Physics and Chemistry of Electronic Materials, 1998, p. 142-144.(in Ukrainian) 

15 Shpotyuk O.I., Kovalskiy A.P., Golovchak R.Ya. Role of surface in static radiation-induced changes of optical properties of chalcogenide vitreous semiconductors. Problems of Atomic Science & Technique, v. 6-7, 1998, p. 260-262. (in Russian)

14 Vakiv M.M., Shpotyuk O.I., Golovchak R.Ya., Kovalskiy A.P., Balitska V.O. Radiation-stimulated changes of spectral characteristics of transmission in chalcogenide glasses of As2S3-Ge2S3 system. Bulletin of Lviv University, Part physical. V. 31: Physics and Chemistry of Electronic Materials, 1998, p. 20-22. (in Ukrainian)

13 Shpotyuk O.I., Vakiv M.M., Balitska V.O, Kovalskiy A.P. Radiation-induced defect formation in bismuth-containing vitreous chalcogenides. Materialy Elektroniczne, v. 25 (1), 1997, p. 31-37. 

12 Shpotyuk O.I., Kovalskiy A.P. Thin film radiation-sensitive elements on the base of amorphous chalcogenides. Scientific Works of Ukrainian Vacuum Society, V.3, 1997, p. 179-181. (in Russian)

11 Vakiv M.M., Veremeychuk M.S., Hadzaman I.V., Kovalskiy A.P., Mrooz O.Ya., Shpotyuk O.I. Electrophysical properties and microstructure of semiconducting oxide ceramics of MnCo2O4-CuMn2O4-NiMn2O4 system. Bulletin of Lviv University, Part chemical. V. 33: Problems of crystal chemistry of intermetallic compounds and chemical analysis of metals. 1994, p. 8-11. (in Ukrainian)

10 Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Radiation-stimulated changes of optical transmission in chalcogenide glasses of As2Se3Bix system. Optoelectronics and Semiconducting Technique, 1991, v. 19, p. 81-85. (in Russian)

9   Shpotyuk O.I., Vakiv N.M., Kornelyuk V.M., Kovalskiy A.P. Solid state sensors of ionizing irradiation based on amorphous chalcogenides of arsenic. Metrology, 1991, No 9, p. 15-18. 

8   Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Impurity absorption in bismuth-containing glasses based on arsenic selenide. Physical Electronics, v.41. 1990, p. 3-5. 

7   Kovalskiy A.P. Influence of gamma-irradiation on optical transmission spectra of As2Se3Bix chalcogenide glasses. Bulletin of Lviv University, Part physical. V. 22: Physical Materials Science, 1989, p. 85-88. (in Ukrainian)

Shpotyuk O.I., Sawicki I.V., Kovalskiy A.P. Physical features of revealing of radiation-stimulated effects in vitreous arsenic selenides. Physical Electronics, v.39. 1989, p. 59-64. (in Russian)

5  Kovalskiy A.P., Minaev V.S., Shpotyuk O.I. On some features of bismuth impurity influence on the microhardness of arsenic selenide. Electronic Technique. Part 6: Materials. 1988, v.7, p. 61-62. (in Russian)

Shpotyuk O.I., Kovalskiy A.P. Investigation of photoelectrical properties of vitreous semiconductors based on arsenic triselenide. Physical Electronics, v.37. 1988, p. 95-99. (in Russian)

Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Vibrational spectra of impurity absorption in bismuth-containing glasses based on arsenic triselenide. Journal of Applied Spectroscopy. 1988, 7 p. Deposited in VINITI June 20 1988, No 4850-88. (in Russian)

Shpotyuk O.I., Sawicki I.V., Matkovskii A.O., Kovalskiy A.P., Kornelyuk V.M. Photoconductivity of the vitreous alloys based on arsenic triselenide. Bulletin of Lviv University, Part physical. V.20: Problems of condensed matter physics. 1986, p. 60-64. (in Russian)

Matkovskii A.O., Shpotyuk O.I., Sawicki I.V., Kovalskiy A.P., Osypenko L.V. Optical and photoelectrical properties of the chalcogenide glasses of (As2Se3)x(Sb2Se3)1-x system. Reports of Academy of Sciences of Ukrainian SSR, series A, 1984, No 9, p. 80-84. (in Russian)     

Chapters in books: 

3 Jain H., Kovalskiy A., Vlcek M. Chalcogenide glass resists for lithography. In book: Chalcogenide glasses. Preparation, properties and applications / Eds. J.-L. Adam and X. Zhang. Oxford-Cambridge-Philadelphia-New Dehli: Woodhead Publishing. 2014, p. 562-596.

   Matkovskii A.O., Shpotyuk O.I., Vakiv M.M., Kovalskiy A.P. Radiation-stimulated changes of materials properties. Chalcogenide vitreous semiconductors. In book: Matkovskii A.O., Sugak D.Yu., Ubizskii S.B., Shpotyuk O.I., Tshornyj E.A., Vakiv M.M., Mokritskii V.A. Effect of ionizing irradiations on electronic materials / Ed. A.O. Matkovskii. Lviv: Svit. 1994, p. 158-180. (in Russian)  

1    Shpotyuk O.I., Kovalskiy A.P., Sawicki I.V., Matkovskii A.O. Photo-  and radiation-chemical transformations in chalcogenide vitreous  semiconductors. In book: Materials and devices for hologram registration / Ed. V.A. Barachevsky. Leningrad: Leningrad State Univ. 1986, p. 12-17. (in Russian)