修士2年
高橋 尚伸
タカハシ マサノブ (Masanobu Takahashi)
＜査読付き学術論文＞
Y. Jiao, M. Takahashi, T. Sato, and M. Akazawa; "Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface," Jpn. J. Appl. Phys. Vol. 63, pp. 09SP19-1 – 6 (2024).
M. Takahashi, Y. Jiao, and M. Akazawa; “Effects of SiO2 cap annealing at 800 ℃ on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy,” Jpn. J. Appl. Phys. Vol. 63, pp. 110905-1 – 4 (2024).
＜国際会議＞
M. Akazawa, Y. Jiao, M. Takahashi, T. Shimazaki, and T. Sato; "Effects of Annealing at 800 ℃ on SiO2/GaN Interfaces Studied by X-ray Photoelectron Spectroscopy," Compound Semiconductor Week 2024 (CSW2024, Lund University, Lund, Sweden, June 3–6, 2024).
M. Akazawa, Y. Jiao, M. Takahashi, T. Shimazaki, and T. Sato; "Investigation of Charges Originated from Near-Surface Defects in p-type GaN Using X-ray Photoelectron Spectroscopy and MOS Diodes," International Workshop on Nitride Semiconductors 2024 (IWN2024, Hilton Hawaiian Village, O’ahu, Hawai’i, USA, Nov. 3–8, 2024).
Y. Jiao, M. Takahashi, and M. Akazawa; "X-Ray Photoelectron Spectroscopy Monitoring of Fermi Level Position at Mg-Doped p-Type GaN Surface During MOS Interface Formation," 32nd International Colloquium on Scanning Probe Microscopy (ICSPM32, Hotel Monterey Edelhof Sapporo, Sapporo, Japan, Nov. 18–20, 2024).
M. Takahashi, Y. Jiao, and M. Akazawa; "Reduction of positive fixed charges at Al2O3/p-GaN interface by pre-annealing using AlON cap layer," 17th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/ 18th International Conference on Plasma-Nano Technology & Science (ISPlasma2025/IC-PLANTS2025, Chubu University, Kasugai, Aichi, Japan, March 3–7, 2025).
M. Akazawa, G. Shindo, and M. Takahashi; "Effects of Pre-Annealing at 850 ℃ Using AlON Cap Layer on Properties of GaN MOS Interfaces," Compound Semiconductor Week 2025 (CSW2025, Banff Centre for Arts and Creativity, Banff, Alberta, Canada, May 27–30, 2025).
M. Takahashi, Y. Jiao, and M. Akazawa; "Investigation of GaN MOS structures with SiO2 formed by atomic layer deposition using bis (ethyl-methyl-amino) silane and ozone," 15th International Conference on Nitride Semiconductors (ICNS-15, Clarion Hotel Malmö Live, Malmö, Sweden, July 6–11, 2025).
M. Akazawa, M. Takahashi, K. Itoh, and T. Narita; "Suppression of hole injection into near-interface traps by inserting AlN interfacial layer between AlSiO and GaN," 15th International Conference on Nitride Semiconductors (ICNS-15, Clarion Hotel Malmö Live, Malmö, Sweden, July 6–11, 2025).
＜国内学会・シンポジウム＞
焦 一寧, 高橋 尚伸, 島崎 喬大, 佐藤 威友，赤澤 正道; 「p型 GaN 表面に発生する電荷についての検討」，2024年秋季応用物理学会学術講演会.
高橋 尚伸, 焦 一寜, 赤澤 正道; 「GaNに対するSi02キャップアニールの効果についてのXPS評価」2024年秋季応用物理学会学術講演会.
高橋 尚伸, 焦 一寜, 赤澤 正道; 「AlON表面保護膜を用いた脱水素アニールがp-GaN MOS界面に与える影響」2025年春季応用物理学会学術講演会.
高橋 尚伸, 嶋崎 喬大, 佐藤 威友, 赤澤 正道; 「光電気化学エッチングと850℃アニールを組み合わせたp-GaN MOS界面の制御の試み」2025年秋季応用物理学会学術講演会.
唐沢 陽向, 高橋 尚伸, 赤澤 正道; 「Mgイオン注入GaNに対する活性化熱処理前の850℃熱処理の効果についてのMOS構造を用いた評価」2025年秋季応用物理学会学術講演会.