Sang-Min Kang
Building E10, Room #204, Chungbuk National University
E-Mail : rkdtkdlas01@chungbuk.ac.kr
Education
M.S.School of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of Korea (Mar. 2025 - )
B.S. School of Semiconductor Engineering, Chungbuk National University, Cheongju, Republic of Korea (Mar. 2021 - Aug. 2025)
Research Interests
Reliability of Semiconductor Devices
– Developing process technologies for enhancing device performance and reliability.
(Developed technologies: Low-Temperature Deuterium Annealing, Rapid Deuterium Annealing)
– Conducting stress tests on device to evaluate reliability and life-time. (i.e. HCI&PBS electrical stress)
Fabrication of Semiconductor Device
– Fabricating MOSFETs based on enclosed-layout transistor (ELT) structure
– Fabricating device: Silicon based MOSFETs
– Fabricated devices are used for analyzing effect of developing process technology
Physically Unclonable Function (PUF) Development
– Implementing hardware-based PUFs by exploiting intrinsic process-induced variability at the device level
– Improving the randomness and stability of PUF responses through process and device co-optimization
– Generating secure hardware security keys using electrical parameters extracted from fabricated MOSFETs
Technical Skills
Device Fabrication Processing (Thermal Deuterium Annealing (including LTDA & RDA), Thermal Evaporator, Reactive Ion Etcher, Mask Aligner, Spin Coater)
Device Characterization (Alpha Step, Probe Station (Keithley 4200A, B1500A))
Publications
International Journal Papers (SCIE)
[5] M.-K. Lee, D.-E. Bang, S.-J. Chang, H.-J. Park, E.-C. Yun, S.-M. Kang, M.-W. Kim, D. Sohn, and J.-Y. Park*, "Rapid Hydrogen Annealing for Enhanced Device Performance and Reduced Thermal Budget", Semicond. Sci. Technol., vol. xx, no. x, pp. xxxx-xxxx, in press.
[4] D. Sohn, M.-K. Lee, D.-E. Bang, H.-J. Park, E.-C. Yun, S.-M. Kang, M.-W. Kim, H. Jeon*, and J.-Y. Park*, "Wrap-Around Word-Line DRAM Cell Transistor Enabling Enhanced Read/Write Speed", IEEE Trans. Electron Devices, vol. xx, no. x, pp. xxxx-xxxx, in press. [ Website ]
[3] H.-J. Park, M.-K. Lee, E.-C. Yun, D. Sohn, M.-W. Kim, S.-M. Kang, H. Jeon, and J.-Y. Park*, "Investigation of Inner Spacer-Less Nanosheet FETs from an Off-State Current Perspective", IEEE Access, vol. 13, pp. 199876-199882, Nov. 2025. [ Website ]
[2] M.-W. Kim, H.-J. Park, M.-K. Lee, E.-C. Yun, S.-M. Kang, D.-E. Bang, T.-H. Kil, D. Sohn, and J.-Y. Park*, "Study on the Impact of Deuterium Annealing Duration on MOSFET Performance", Semicond. Sci. Technol., vol. 40, no. 11, pp. 1-6, Nov. 2025. [ Website ]
[1] T.-H. Kil, J.-W. Yeon, H.-J. Park, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-M. Kang, and J.-Y. Park*, "Low-Temperature Deuterium Annealing for HfO2 /SiO2 Gate Dielectric in Silicon MOSFETs", IEEE J. Electron Devices Soc., vol. 12, no. 1, pp. 1030-1033, Dec. 2024. [ Website ]
Domestic Journal Papers (KCI)
[1] S.-M. Kang, Y.-J. Choi, H.-J. Park, T.-H. Kil, J.-W. Yeon, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, M.-S. Kim*, and J.-Y. Park*, "Study on Multiple Post-Metallization Annealing for Enhancing the Performance and Reliability of Silicon MOSFETs", Trans. Electr. Electron. Mater., vol. 38, no. 2, pp. 187–192, Mar. 2025. [ Website ]
Patents
[2] 박준영, 윤의철, 김민우, 강상민, "반응기 챔버 및 이를 포함하는 급속 저온 중수소 열처리 시스템", KR 10-2025-0064149, 2025.05.16.
[1] 박준영, 연주원, 길태현, 박효준, 최유진, 강상민, 지홍석, "박막의 표면 거칠기 및 균일성 개선을 위한 저온 중수소 어닐링 방법 및 이에 의하여 제조된 반도체 소자", KR 10-2024-0053442, 2024.04.22.
Conferences
[10] J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, D.-E. Bang, and J.-Y. Park*, "Low-Temperature Deuterium Annealing for Improved Immunity against Hot-Carrier Injection in HKMG MOSFETs", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]
[9] M.-K. Lee, H.-J. Park, E.-C. Yun, J.-W. Yeon, T.-H. Kil, M.-W. Kim, S.-J. Jeon, D.-E. Bang, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park*, "Partial Trench Gate Nanosheet FETs for Enhanced ION/ IOFF Ratio", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]
[8] D.-E. Bang, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park*, "Junction Depth Engineered Trench Gate Nanosheet FETs for Suppressing Leakage Current in Parasitic Substrate Channels", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]
[7] A-Y. Kim, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, D.-E. Bang, S.-M. Kang, and J.-Y. Park*, "Hetero-Gate Dielectric Structures for Reducing Ambipolar Current in Nanosheet Tunneling FETs", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]
[6] T.-H. Kil, J.-W. Yeon, H.-J. Park, D.-E. Bang, M.-K. Lee, E.-C. Yun, M.-W. Kim, S.-J. Jeon, D. Sohn, A-Y. Kim, S.-M. Kang, and J.-Y. Park*, "Material Engineering of Inner Spacer in Nanosheet FETs to Reduce Off-State Current", The 32nd Korean Conference on Semiconductors, Feb. 2025. [ PDF ]
[5] E.-C. Yun, J.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, H.-S. Jee, D. Sohn, S.-M. Kang, A-Y. Kim, Y.-J. Choi, D.-E. Bang, and J.-Y. Park*, "Spacer-Less Trench Gate Nanosheet FET for Improved On-State Current and Simplified Fabrication Process", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ]
[4] T.-H. Kil, H.-J. Park, J.-W. Yeon, E.-C. Yun, M.-K. Lee, D. Sohn, H.-S. Jee, S.-M. Kang, A-Y. Kim, Y.-J. Choi, D.-E. Bang, and J.-Y. Park*, "Low-Temperature Deuterium Annealing for Enhanced Ionizing Radiation and Electrical Stress Immunity in MOSFETs", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ]
[3] H.-S. Jee, D. Sohn, J.-W. Yeon, H.-J. Park, T.-H. Kil, E.-C. Yun, M.-K. Lee, S.-M. Kang, A-Y. Kim, Y.-J. Choi, D.-E. Bang, and J.-Y. Park*, "Development of Physically Unclonable Function (PUF) using Multiple Process Variables", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] "Award" [ PDF ]
[2] Y.-J. Choi, S.-M. Kang, H.-J. Park, T.-H. Kil, J.-W. Yeon, H.-S. Jee, E.-C. Yun, M.-K. Lee, D. Sohn, D.-E. Bang, A-Y. Kim, and J.-Y. Park*, "Impact of Hydrogen Passivation after Deuterium Annealing in the Fabrication of Silicon MOSFETs", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] "Award" [ PDF ]
[1] D.-E. Bang, A-Y. Kim, Y.-W. Yeon, H.-J. Park, T.-H. Kil, M.-K. Lee, E.-C. Yun, D. Sohn, H.-S. Jee, S.-M. Kang, Y.-J. Choi, and J.-Y. Park*, "Optimization of Doping Profile for Improved Performance of Nanosheet FET", KIEEME Annual Summer Conference 2024, Jun. 2024. [ PDF ] "Award" [ PDF ]
Research Projects
[1] 실리콘 MOSFET의 이중 파라미터 변동성을 활용한 Physically Unclonable Function 개발, 한국연구재단 (2025.09.01 - 2026.08.31)
Teaching Assistant (TA)
Awards
[2] 한국전기전자재료학회 장려상 (Jun. 2024)
[1] 캠퍼스 특허 유니버시아드 장려상 (Oct. 2023)