Ion channeling

When an ion beam is well aligned with a low index crystallographic direction of a single crystal, e.g  <100> of Si, there is a >95% reduction in the yield of small impact parameter interactions processes, namely RBS, PIXE and NRA.  RBS and PIXE measurements in the channeling orientation are therefore, ideal for providing crystallographic information on radiation damagescrystal defectsimpurity location in single crystals and strains in superlattice structures.  The ion channeling process can be modeled in terms of ion scattering from atomic strings (axial channeling) or planes (planar channeling) with uniform continuum potentials.  Using this continuum model, quantitative analysis is also possible.

Lattice Location of Impurities